Schottky Barrier Diode JSCJ B0530WS Featuring Guard Ring and Low Forward Voltage Drop for Electronics

Key Attributes
Model Number: B0530WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5.5A
Reverse Leakage Current (Ir):
500uA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
450mV@0.5A
Current - Rectified:
500mA
Mfr. Part #:
B0530WS
Package:
SOD-323
Product Description

Product Overview

The B0530WS is a Schottky Barrier Diode featuring low forward voltage drop, guard ring construction for transient protection, and high conductance. It is available in a lead-free version and is designed for various electronic applications requiring efficient rectification and voltage handling.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: SOD-323
  • Marking: SE (Cathode indicated by bar)
  • Molding Compound: Solid dot indicates Green molding compound; none indicates normal device.
  • Origin: China (implied by manufacturer)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Peak repetitive peak reverse voltageVRRM30V
Working peak reverse voltageVRWM30V
DC blocking voltageVR30V
RMS reverse voltageVR(RMS)21V
Average rectified output currentIo0.5A
Non-repetitive Peak Forward Surge CurrentIFSM@t=8.3ms5.5A
Power dissipationPD200mW
Thermal resistance junction to ambientRJA500/W
Operating Junction Temperature RangeTj-40+125
Storage Temperature RangeTSTG-55+150
Voltage rate of changedv/dt1000V/s
Reverse breakdown voltageV(BR)IR=500uA30V
Reverse currentIRVR=15V80100uA
Reverse currentIRVR=20V170uA
Reverse currentIRVR=30V500uA
Forward voltageVFIF=0.1A0.36V
Forward voltageVFIF=0.5A0.45V
Capacitance between terminalsCTVR=1,f=1MHzpF

2410121931_JSCJ-B0530WS_C2961213.pdf

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