P Channel Power MOSFET CJAB25P03 with Advanced Trench Technology and Superior ESD Capability Features
Key Attributes
Model Number:
CJAB25P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
205pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.7nF@15V
Pd - Power Dissipation:
-
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
CJAB25P03
Package:
PDFNWB3.3x3.3-8L
Product Description
CJAB25P03 P-Channel Power MOSFET
The CJAB25P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design ensures ultra-low RDS(ON) and it is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. The package provides excellent heat dissipation, and the special process technology enhances ESD capability. This MOSFET is suitable for battery and loading switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB25P03
- Package: PDFNWB3.33.3-8L
- Material: Plastic-Encapsulate MOSFET
- Marking: CJAB 25P03, XX (Date Code), Solid dot=Pin1 indicator
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (1) | -25 | A | ||
| Pulsed Drain Current | IDM | -100 | A | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 150 | mJ | ||
| Power Dissipation | PD | 41.67 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | (2) | 3 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -1.6 | -3 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 14 | 20 | mΩ | |
| Static drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-10A | 21 | 34 | mΩ | |
| Forward transconductance | gFS | VDS =-10V, ID =-10A | 22 | S | ||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 1700 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V, f =1MHz | 296 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V, f =1MHz | 205 | pF | ||
| Total gate charge | Qg | VDD=-15V,ID=-1A,RL=15Ω, VGS=-10V,RG=2.5Ω | 30 | nC | ||
| Gate-source charge | Qgs | VDD=-15V,ID=-1A,RL=15Ω, VGS=-10V,RG=2.5Ω | 6 | nC | ||
| Gate-drain charge | Qg d | VDD=-15V,ID=-1A,RL=15Ω, VGS=-10V,RG=2.5Ω | 9 | nC | ||
| Turn-on delay time | td(on) | VDS=-15V,ID=-10A, VGS=-10V | 10 | ns | ||
| Turn-on rise time | tr | VDS=-15V,ID=-10A, VGS=-10V | 26 | ns | ||
| Turn-off delay time | td(off) | VDS=-15V,ID=-10A, VGS=-10V | 35 | ns | ||
| Turn-off fall time | tf | VDS=-15V,ID=-10A, VGS=-10V | 8 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -0.8 | -1.2 | V | |
| Continuous drain-source diode forward current | IS | -25 | A | |||
| Pulsed drain-source diode forward current | ISM | -100 | A |
2410121917_JSCJ-CJAB25P03_C504068.pdf
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