Low RDS On Dual N Channel MOSFET JSCJ CJS9004A Suitable for Uni Directional and Bi Directional Loads
Key Attributes
Model Number:
CJS9004A
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
RDS(on):
11mΩ@2.5V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
2 N-Channel
Output Capacitance(Coss):
193pF
Input Capacitance(Ciss):
1.258nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
CJS9004A
Package:
TSSOP-8
Product Description
Product Overview
The CJS9004A is a Dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a TSSOP8.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: S9004
- Packaging: TSSOP8
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =4.5V, VDS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1.0 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 6.0 | 7.0 | m | |
| VGS =4.0V, ID =3A | 7.5 | 8.0 | m | |||
| VGS =3.8V, ID =3A | 8.5 | 9.0 | m | |||
| VGS =3.1V, ID =3A | 9.7 | 10.5 | m | |||
| VGS =2.5V, ID =3A | 11.0 | 11.5 | m | |||
| Diode forward voltage | VSD | IS =3A, VGS = 0V | 0.85 | 1.2 | V | |
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =0.1MHz | 193 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =0.1MHz | 51 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =0.1MHz | pF | |||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 15 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 3.4 | nC | ||
| Gate-drain charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 5.7 | nC | ||
| Turn-on delay time | td(on) | VGS=4.5V,VDD=10V, RL=1.35,RGEN=3 | 30 | ns | ||
| Turn-on rise time | tr | VGS=4.5V,VDD=10V, RL=1.35,RGEN=3 | 54 | ns | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDD=10V, RL=1.35,RGEN=3 | 77 | ns | ||
| Turn-off fall time | tf | VGS=4.5V,VDD=10V, RL=1.35,RGEN=3 | 58 | ns | ||
| Maximum Ratings: Drain-Source Voltage | VDS | 20 | V | |||
| Maximum Ratings: Gate-Source Voltage | VGS | 12 | V | |||
| Maximum Ratings: Continuous Drain Current | ID | Ta=25 | 10 | A | ||
| Maximum Ratings: Pulsed Drain Current | IDM | Ta=25 | 50 | A | ||
| Maximum Ratings: Power Dissipation | PD | Ta=25 | 2.0 | W | ||
| Maximum Ratings: Thermal Resistance Junction to Ambient | RJA | Ta=25 | 62.5 | /W | ||
| Maximum Ratings: Operating Junction and Storage Temperature | TJ, Tstg | -55 | +150 |
2409301804_JSCJ-CJS9004A_C19268983.pdf
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