Load Switching P Channel MOSFET JSCJ CJL3415 with Low Gate Voltage and High Current Capacity
Key Attributes
Model Number:
CJL3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
73mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
CJL3415
Package:
SOT-23-6L
Product Description
CJL3415 P-Channel MOSFET
The CJL3415 is a P-Channel MOSFET in a SOT-23-6L package, designed for load switching and PWM applications. It offers excellent RDS(ON), low gate charge, and low gate voltage, providing high power and current handling capability.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand)
- Package Type: SOT-23-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current (t10s) | ID | -4.0 | A | |||
| Maximum Power Dissipation (t10s) | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Pulsed Drain Current (note1) | IDM | -30 | A | |||
| Static Parameters | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate threshold voltage (note2) | VGS(th) | VDS =VGS, ID =-250A | -0.3 | -0.56 | -1 | V |
| Gate-body leakage current | IGSS | VDS =0V, VGS =8V | 10 | A | ||
| Zero gate voltage drain current | IDSS | VDS =-16V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance(note2) | RDS(on) | VGS =-4.5V, ID =-4A | 37 | 50 | m | |
| VGS =-2.5V, ID =-4A | 45 | 60 | ||||
| VGS =-1.8V, ID =-2A | 56 | 73 | ||||
| Forward transconductance(note2) | gFS | VDS =-5V, ID =-4A | 16 | S | ||
| Dynamic Parameters (note3) | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 1450 | pF | ||
| Output capacitance | Coss | 205 | ||||
| Reverse transfer capacitance | Crss | 160 | ||||
| Switching Parameters (note3) | ||||||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-Source charge | Qgs | 1.3 | ||||
| Gate-drain charge | Qg | 4.5 | ||||
| Turn-on delay time | td(on) | VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5, | 9.5 | ns | ||
| Turn-on rise time | tr | 17 | ||||
| Turn-off delay time | td(off) | 94 | ||||
| Turn-off fall time | tf | 35 | ||||
| Drain-Source Diode Characteristics (note2) | ||||||
| Drain-source diode forward voltage | Vds | VGS = 0V, IS =-1A | -1 | V | ||
| Maximum continuous drain-source diode forward current | IS | -4 | A | |||
2410121520_JSCJ-CJL3415_C114069.pdf
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