Load Switching P Channel MOSFET JSCJ CJL3415 with Low Gate Voltage and High Current Capacity

Key Attributes
Model Number: CJL3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
73mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
CJL3415
Package:
SOT-23-6L
Product Description

CJL3415 P-Channel MOSFET

The CJL3415 is a P-Channel MOSFET in a SOT-23-6L package, designed for load switching and PWM applications. It offers excellent RDS(ON), low gate charge, and low gate voltage, providing high power and current handling capability.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China (implied by brand)
  • Package Type: SOT-23-6L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 8 V
Continuous Drain Current (t10s) ID -4.0 A
Maximum Power Dissipation (t10s) PD 0.35 W
Thermal Resistance from Junction to Ambient RJA 357 /W
Operating Junction Temperature TJ 150
Storage Temperature TSTG -55 +150
Pulsed Drain Current (note1) IDM -30 A
Static Parameters
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Gate threshold voltage (note2) VGS(th) VDS =VGS, ID =-250A -0.3 -0.56 -1 V
Gate-body leakage current IGSS VDS =0V, VGS =8V 10 A
Zero gate voltage drain current IDSS VDS =-16V, VGS =0V -1 A
Drain-source on-state resistance(note2) RDS(on) VGS =-4.5V, ID =-4A 37 50 m
VGS =-2.5V, ID =-4A 45 60
VGS =-1.8V, ID =-2A 56 73
Forward transconductance(note2) gFS VDS =-5V, ID =-4A 16 S
Dynamic Parameters (note3)
Input capacitance Ciss VDS =-10V,VGS =0V,f =1MHz 1450 pF
Output capacitance Coss 205
Reverse transfer capacitance Crss 160
Switching Parameters (note3)
Total gate charge Qg VDS =-10V,VGS =-4.5V,ID =-4A 17.2 nC
Gate-Source charge Qgs 1.3
Gate-drain charge Qg 4.5
Turn-on delay time td(on) VDS=-10V, VGS=-4.5V RGEN =3, RL=2.5, 9.5 ns
Turn-on rise time tr 17
Turn-off delay time td(off) 94
Turn-off fall time tf 35
Drain-Source Diode Characteristics (note2)
Drain-source diode forward voltage Vds VGS = 0V, IS =-1A -1 V
Maximum continuous drain-source diode forward current IS -4 A

2410121520_JSCJ-CJL3415_C114069.pdf

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