Low Resistance N Channel Power MOSFET JSCJ CJQ20N03 Designed for Load Switch and Battery Protection
Key Attributes
Model Number:
CJQ20N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
396pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.412nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
CJQ20N03
Package:
SOP-8
Product Description
Product Overview
The CJQ20N03 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It leverages advanced trench MOSFET technology and a low-resistance package to achieve extremely low RDS(ON). This makes it an ideal component for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJQ20N03
- Package Type: SOP8
- Molding Compound: Green (if solid dot indicator is present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.4 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 3.1 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 4.5 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =10A | 24 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2412 | pF | ||
| Output capacitance | Coss | 420 | ||||
| Reverse transfer capacitance | Crss | 396 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=10A | 54 | nC | ||
| Gate-source charge | Qgs | 4.1 | ||||
| Gate-drain charge | Qg | 19 | ||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=3 | 19 | ns | ||
| Turn-on rise time | tr | 44 | ||||
| Turn-off delay time | td(off) | 58 | ||||
| Turn-off fall time | tf | 16.7 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage (note1) | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 15 | A | |||
| Pulsed drain-source diode forward current | ISM | 64 | A | |||
| Maximum Ratings ( Ta=25 unless otherwise noted ) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | 20 | A | |||
| Pulsed Drain Current | IDM | 75 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10s) | TL | 260 | ||||
2410121806_JSCJ-CJQ20N03_C504132.pdf
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