Surface Mount Dual N Channel MOSFET JSCJ CJX3134K designed for load switching and battery management
Key Attributes
Model Number:
CJX3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
120pF@16V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
CJX3134K
Package:
SOT-563
Product Description
Product Overview
The CJX3134K is a dual N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it equivalent to two CJ3134K devices. This MOSFET is ideal for load/power switching, interfacing, battery management in ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Package: SOT-563
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 20 | V | |||
| Typical Gate-source voltage | VGS | ±12 | V | |||
| Continuous drain current (t ≤10s) | ID | 0.75 | A | |||
| Power dissipation(note1) | PD | 0.15 | W | |||
| Thermal resistance from junction to ambient | RΘJA | 833 | ℃/W | |||
| Junction temperature | TJ | 150 | ℃ | |||
| Storage temperature | Tstg | -55 | ~ | +150 | ℃ | |
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V (BR) DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | µA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 0.35 | 0.54 | 1.1 | V |
| Drain-source on-resistance (note 2) | RDS(on) | VGS =4.5V, ID =0.65A | 270 | 380 | mΩ | |
| VGS =2.5V, ID =0.55A | 320 | 450 | mΩ | |||
| VGS =1.8V, ID =0.45A | 390 | 800 | mΩ | |||
| Forward tranconductance (note 2) | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage(note 2) | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| DYNAMIC PARAMETERS (note 3) | ||||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | |
| Output Capacitance | Coss | VDS =16V,VGS =0V,f =1MHz | 13 | 20 | pF | |
| Reverse Transfer Capacitance | Crss | VDS =16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| SWITCHING PARAMETERS(note 3) | ||||||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω | 6.7 | ns | ||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω | 4.8 | ns | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω | 17.3 | ns | ||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, ID=0.5A,RGEN=10Ω | 7.4 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID =7A | 20 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID =7A | 1 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V,ID =7A | 4 | nC | ||
2410121608_JSCJ-CJX3134K_C504147.pdf
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