Power MOSFET N Channel JSCJ CJU20N06A Featuring Low Gate Charge and Fast Switching for Power Control
Key Attributes
Model Number:
CJU20N06A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.7nF
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
CJU20N06A
Package:
TO-252-2L
Product Description
Product Overview
The CJU20N06A is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Code: CJU20N06A
- Marking: U20N06A (Device code)
- Material: Plastic-Encapsulate MOSFETS
- Package Type: TO-252-2L
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =48V, VGS =0V | 1.0 | A | ||
| TJ =125 | 2.0 | A | ||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 26 | m | ||
| VGS =4.5V, ID =10A | 35 | m | ||||
| Gate resistance | Rg | f =1MHz | 4.2 | |||
| 3.4 | ||||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 850 | pF | ||
| Output capacitance | Coss | 1700 | ||||
| Reverse transfer capacitance | Crss | 120 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 18 | nC | ||
| Gate-source charge | Qgs | 2.0 | ||||
| Gate-drain charge | Qg | 4.4 | ||||
| Switching times | VDS=30V,RL=2.5, VGS=10V,RG=3 | 36 | ns | |||
| 40 | ||||||
| 110 | ||||||
| 16 | ||||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 80 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 20 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulsed Avalanche Energy | EAS | 49 | mJ | |||
| Power Dissipation | PD | TC=25 | 35 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance Junction to Case | RJC | 3.12 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2409302203_JSCJ-CJU20N06A_C2847903.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
