N Channel Power MOSFET JSCJ CJAC1R5SN04C Designed for Fast Switching and High Energy Pulse Tolerance
Key Attributes
Model Number:
CJAC1R5SN04C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
RDS(on):
2.8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
3.9nF@20V
Pd - Power Dissipation:
96W
Gate Charge(Qg):
-
Mfr. Part #:
CJAC1R5SN04C
Package:
PDFNWB-8L(5x6)
Product Description
Product Overview
The CJAC1R5SN04C is an N-Channel enhancement mode power field effect transistor utilizing SGT technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC1R5SN04C
- Marking: CJAC1R5SN04C
- Package: PDFNWB5x6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 180 | A | ||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulsed Avalanche Energy | EAS | VDD=20V,VGS=10V, L=0.5mH, Rg=25 Starting TJ= 25C | 96 | mJ | ||
| Power Dissipation | PD | TC=25C | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 1.3 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =1mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 1.0 | 1.5 | A | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =30A | 1.2 | 1.8 | m | |
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =30A | 1.8 | 2.8 | m | |
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =100kHz | 3900 | pF | ||
| Output capacitance | Coss | 1390 | pF | |||
| Reverse transfer capacitance | Crss | 58 | pF | |||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=75A | 57.8 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=20V, ID=75A | 9.9 | nC | ||
| Gate-drain charge | Qgd | VGS=10V, VDS=20V, ID=75A | 4.7 | nC | ||
| Turn-on delay time | td(on) | VDS=20V, VGS=10V, RL=0.8 , Rg=4.8 | 11.7 | ns | ||
| Turn-on rise time | tr | 9.8 | ns | |||
| Turn-off delay time | td(off) | 85 | ns | |||
| Turn-off fall time | tf | 45 | ns | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=30A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 180 | A | |||
| Pulsed drain-source diode forward current | ISM | 720 | A | |||
| Reverse recovery time | trr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 78 | ns | ||
| Reverse recovery charge | Qrr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 138 | nC |
2410121929_JSCJ-CJAC1R5SN04C_C19269158.pdf
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