Durable P Channel Power MOSFET JSCJ CJAE55P03 designed for battery and loading switching applications
Key Attributes
Model Number:
CJAE55P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
273pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
3.282nF@15V
Gate Charge(Qg):
34.3nC
Mfr. Part #:
CJAE55P03
Package:
DFNWB-8L(3x3)
Product Description
Product Overview
The CJAE55P03 is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design and special process technology provide ultra-low RDS(ON), good stability, high ESD capability, and excellent heat dissipation. This MOSFET is suitable for a wide range of applications, including battery and loading switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAE55P03
- Package: DFNWB33-8L
- Marking: 55P03
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Tc=25 | -55 | A | ||
| Pulsed Drain Current | IDM | -200 | A | |||
| Single Pulsed Avalanche Energy | EAS | 150 | mJ | |||
| Power Dissipation | PD | Tc=25 | 50 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | Mounted on 1 in FR-4 board | 83.3 | /W | ||
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.6 | -2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-10A | 8.0 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =-4.5V, ID =-8A | 11.5 | m | ||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 3282 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V, f =1MHz | 413 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V, f =1MHz | 273 | pF | ||
| Total gate charge | Qg | VGS=-4.5V, VDS=-15V, ID=-10A | 34.3 | nC | ||
| Gate-source charge | Qgs | VGS=-4.5V, VDS=-15V, ID=-10A | 11 | nC | ||
| Gate-drain charge | Qg d | VGS=-4.5V, VDS=-15V, ID=-10A | 10 | nC | ||
| Turn-on delay time | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RG=6 | 25 | ns | ||
| Turn-on rise time | tr | VDD=-15V,ID=-1A, VGS=-10V,RG=6 | 11 | ns | ||
| Turn-off delay time | td(off) | VDD=-15V,ID=-1A, VGS=-10V,RG=6 | 136 | ns | ||
| Turn-off fall time | tf | VDD=-15V,ID=-1A, VGS=-10V,RG=6 | 49 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-10A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -55 | A | |||
| Pulsed drain-source diode forward current | ISM | -200 | A | |||
| Forward transconductance | gFS | VDS =-10V, ID =-8A | 16 | S |
2411121116_JSCJ-CJAE55P03_C5158034.pdf
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