Compact P Channel MOSFET JSCJ CJ2301 in SOT 23 Package for Load Switching and Power Conversion
Key Attributes
Model Number:
CJ2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
142mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ2301
Package:
SOT-23
Product Description
Product Overview
The CJ2301 is a P-Channel 20-V (D-S) MOSFET in an SOT-23 package. It features TrenchFET Power MOSFET technology, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Marking: S1=Device code, Solid dot = Green molding compound device, if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -0.7 | -1 | V |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-2.8A | 0.090 | 0.112 | ||
| VGS =-2.5V, ID =-2.0A | 0.110 | 0.142 | ||||
| Forward transconductance | gfs | VDS =-5V, ID =-2.8A | 6.5 | S | ||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 405 | pF | ||
| Output capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 75 | |||
| Reverse transfer capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 55 | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-3A | 5.5 | 10 | nC | |
| VDS =-10V,VGS =-2.5V,ID =-3A | 3.3 | 6 | ||||
| Gate-source charge | Qgs | VDS =-10V,VGS =-4.5V,ID =-3A | 0.7 | nC | ||
| Gate-drain charge | Qgd | VDS =-10V,VGS =-4.5V,ID =-3A | 1.3 | nC | ||
| Gate resistance | Rg | f =1MHz | 6.0 | |||
| Turn-on delay time | td(on) | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 11 | 20 | ns | |
| VDD=-10V, RL=10, ID =-1A, VGEN=-2.5V,Rg=1 | ||||||
| Rise time | tr | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 35 | 60 | ||
| VDD=-10V, RL=10, ID =-1A, VGEN=-2.5V,Rg=1 | ||||||
| Turn-off delay time | td(off) | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 30 | 50 | ns | |
| VDD=-10V, RL=10, ID =-1A, VGEN=-2.5V,Rg=1 | ||||||
| Fall time | tf | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 10 | 20 | ||
| VDD=-10V, RL=10, ID =-1A, VGEN=-2.5V,Rg=1 | ||||||
| Continuous source-drain diode current | IS | TC=25 | -0.72 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V |
2410121912_JSCJ-CJ2301_C2910170.pdf
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