Complementary mosfet pair JSCJ CJQ6601 with p channel and n channel offering low rds on in sop8 package
Key Attributes
Model Number:
CJQ6601
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A;4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF;954pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
CJQ6601
Package:
SOP-8
Product Description
Product Overview
The CJQ6601 is a complementary MOSFET pair, featuring a P-channel CJ3401 and an N-channel CJ3400, integrated into a single SOP8 package. Utilizing advanced trench technology, these MOSFETs offer excellent RDS(ON) and low gate charge, making them ideal for high-speed power inverter applications. The device is designed for surface mounting and provides a cost-effective solution for various electronic designs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOP8 Plastic-Encapsulate
- Marking: Q6601
- Pin 1 Indicator: Solid dot
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | N-ch MOS | P-ch MOS | Unit |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 30 | -30 | V |
| Gate-Source Voltage | VGS | ±12 | ±12 | V |
| Drain Current - Continuous (Note 1) | ID | 5.8 | -4.2 | A |
| Drain Current - Pulse (Note 3) | IDM | 23.2 | -16.8 | A |
| Power Dissipation | PD | 1.4 | W | |
| Thermal Resistance from Junction to Ambient | RθJA | 89 | ℃/W | |
| Junction Temperature | Tj | 150 | ℃ | |
| Storage Temperature | Tstg | -55~+150 | ℃ | |
| Lead Temperature | TL | 260 | ℃ | |
| N-channel MOSFET Electrical Characteristics (Ta=25 unless otherwise specified) | ||||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | |
| Zero gate voltage drain current | IDSS | 1 | µA | |
| Gate-body leakage current | IGSS | ±100 | nA | |
| Gate threshold voltage (note 1) | VGS(th) | 0.7 - 1.4 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | 35 (VGS=10V, ID=5.8A) 40 (VGS=4.5V, ID=5A) 52 (VGS=2.5V, ID=4A) | m℉ | |
| Forward transconductance (note 1) | gFS | 8 (VDS=5V, ID=5A) | S | |
| Diode forward voltage (note 1) | VSD | 1 (IS=1A, VGS=0V) | V | |
| Input Capacitance | Ciss | 1050 | pF | |
| Output Capacitance | Coss | 99 | pF | |
| Reverse Transfer Capacitance | Crss | 77 (VDS=15V,VGS=0V,f=1MHz) | pF | |
| Turn-on delay time | td(on) | 5 | ns | |
| Turn-on rise time | tr | 7 | ns | |
| Turn-off delay time | td(off) | 40 | ns | |
| Turn-off fall time | tf | 6 (VGS=10V,VDS=15V, RL=2.7℉,RGEN=3℉, ID=0.5A) | ns | |
| P-channel MOSFET Electrical Characteristics (Ta=25 unless otherwise specified) | ||||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | |
| Zero gate voltage drain current | IDSS | -1 | µA | |
| Gate-body leakage current | IGSS | ±100 | nA | |
| Gate threshold voltage (note 1) | VGS(th) | -0.7 - -1.3 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | 65 (VGS=-10V, ID=-4.2A) 75 (VGS=-4.5V, ID=-4A) 90 (VGS=-2.5V, ID=-1A) | m℉ | |
| Forward transconductance (note 1) | gFS | 7 (VDS=-5V, ID=-5A) | S | |
| Diode forward voltage (note 1) | VSD | -1 (IS=-1A, VGS=0V) | V | |
| Input Capacitance | Ciss | 954 | pF | |
| Output Capacitance | Coss | 115 | pF | |
| Reverse Transfer Capacitance | Crss | 77 (VDS=-15V,VGS=0V,f=1MHz) | pF | |
| Turn-on delay time | td(on) | 6.3 | ns | |
| Turn-on rise time | tr | 3.2 | ns | |
| Turn-off delay time | td(off) | 38.2 | ns | |
| Turn-off fall time | tf | 12 (VGS=-10V,VDS=-15V, RL=3.6℉,RGEN=6℉, ID=0.5A) | ns | |
2411121115_JSCJ-CJQ6601_C504171.pdf
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