Load Switch and PWM Applications Enhanced by JSCJ CJQ4800 Dual N Channel MOSFET with Low Gate Charge
Key Attributes
Model Number:
CJQ4800
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
82pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
879pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
-
Mfr. Part #:
CJQ4800
Package:
SOIC-8
Product Description
Product Overview
The CJQ4800 is a Dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch applications and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOP8
- Material: Plastic-Encapsulate
- Color: Normal device (if no solid dot), Green molding compound device (with solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.0 | 1.4 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =6.9A | 16 | 22 | m | |
| VGS =4.5V, ID =6A | 19 | 27 | m | |||
| Forward tranconductance | gFS | VDS =5V, ID =5A | S | |||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 879 | pF | ||
| Coss | VDS =15V,VGS =0V,f =1MHz | 93 | pF | |||
| Crss | VDS =15V,VGS =0V,f =1MHz | 82 | pF | |||
| Switching Time | td(on) | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 5 | ns | ||
| tr | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 7 | ns | |||
| td(off) | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 40 | ns | |||
| tf | VGS=10V,VDS=15V, RL=1.8,RGEN=3 | 6 | ns |
2411121115_JSCJ-CJQ4800_C504166.pdf
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