TSSOP8 Package Plastic Encapsulate Dual N Channel MOSFET JSCJ CJS2019 for Surface Mount Applications

Key Attributes
Model Number: CJS2019
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
24mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 N-channel
Input Capacitance(Ciss):
800pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
11nC
Mfr. Part #:
CJS2019
Package:
TSSOP-8
Product Description

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

Product Overview: This TSSOP8 Plastic-Encapsulate MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD is a dual N-Channel MOSFET featuring TrenchFET technology for excellent RDS(on) and low gate charge. It offers high power and current handling capabilities, making it suitable for surface mount applications. Key advantages include its robust design for battery protection, load switching, and power management scenarios.

Product Attributes:

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package Type: TSSOP8
  • Material: Plastic-Encapsulate

Technical Specifications:

Parameter Symbol Test Condition Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 20 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =10V, VDS = 0V 100 nA
Gate threshold voltage VGS(th) VDS =VGS, ID =250A 0.7 V
Drain-source on-resistance RDS(on) VGS =4.5V, ID =3A 19.5 27 m
Drain-source on-resistance RDS(on) VGS =2.5V, ID =3A 24 35 m
Forward tranconductance gFS VDS =5V, ID =4.5A 10 S
Diode forward voltage VSD IS=1.25A, VGS = 0V 1.2 V
Input Capacitance Ciss VDS =8V,VGS =0V,f =1MHz 800 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
Reverse Transfer Capacitance Crss VDS =8V,VGS =0V,f =1MHz 125 pF
Turn-on delay time td(on) VDD=10V,VGS=4V, ID=1A,RGEN=10 18 ns
Turn-on rise time tr VDD=10V,VGS=4V, ID=1A,RGEN=10 5 ns
Turn-off delay time td(off) VDD=10V,VGS=4V, ID=1A,RGEN=10 43 ns
Turn-off fall time tf VDD=10V,VGS=4V, ID=1A,RGEN=10 20 ns
Total Gate Charge Qg VDS =10V,VGS =4.5V,ID=4A 11 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
Gate-Drain Charge Qg VDS =10V,VGS =4.5V,ID=4A 2.5 nC

2411121115_JSCJ-CJS2019_C504159.pdf
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