TSSOP8 Package Plastic Encapsulate Dual N Channel MOSFET JSCJ CJS2019 for Surface Mount Applications
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET
Product Overview: This TSSOP8 Plastic-Encapsulate MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD is a dual N-Channel MOSFET featuring TrenchFET technology for excellent RDS(on) and low gate charge. It offers high power and current handling capabilities, making it suitable for surface mount applications. Key advantages include its robust design for battery protection, load switching, and power management scenarios.
Product Attributes:
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: TSSOP8
- Material: Plastic-Encapsulate
Technical Specifications:
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =18V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | V | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 19.5 | 27 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 24 | 35 | m | |
| Forward tranconductance | gFS | VDS =5V, ID =4.5A | 10 | S | ||
| Diode forward voltage | VSD | IS=1.25A, VGS = 0V | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =8V,VGS =0V,f =1MHz | 800 | pF | ||
| Output Capacitance | Coss | VDS =8V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =8V,VGS =0V,f =1MHz | 125 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 18 | ns | ||
| Turn-on rise time | tr | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 5 | ns | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 43 | ns | ||
| Turn-off fall time | tf | VDD=10V,VGS=4V, ID=1A,RGEN=10 | 20 | ns | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V,ID=4A | 2.3 | nC | ||
| Gate-Drain Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 2.5 | nC |
2411121115_JSCJ-CJS2019_C504159.pdf
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