High Collector Current NPN Transistor JSMSEMI S8050 with Excellent HFE Linearity and Complementary S8550
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
-
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
Product Overview
The S8050 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and high total power dissipation, making it a complementary part to the S8550. This transistor is suitable for various high collector current applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23
- Complementary Part: S8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 500 | mA | |||
| Collector Dissipation | PC | @ Ta=25 | 300 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V,IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V,IC=50mA | 120 | 350 | ||
| DC current gain | hFE | VCE=1V,IC=500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
2308071512_JSMSEMI-S8050_C916390.pdf
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