Power Transistor JSMSEMI MJE340G NPN Type with 100 DC Current Gain and 1 Volt Collector Saturation Voltage
Key Attributes
Model Number:
MJE340G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
20W
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Mfr. Part #:
MJE340G
Package:
TO-126
Product Description
Product Overview
The MJE340G is an NPN Power Transistor designed for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V (Max.) @ IC=50mA. It is a complement to the PNP MJE350.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: MJE340G
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 1.0mA; IB= 0 | 300 | V | |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC= 1.0mA; IE= 0 | 300 | V | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1.0mA; IC= 0 | 3 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 50mA ;IB= 5mA | 1.0 | V | |
| ICBO | Collector Cutoff Current | VCB= 300V; IE= 0 | 0.1 | mA | |
| IEBO | Emitter Cutoff Current | VEB= 3V; IC= 0 | 0.1 | mA | |
| hFE | DC Current Gain | IC= 50m A ; VCE= 10V | 100 | 240 | |
| VCBO | Collector-Base Voltage | 300 | V | ||
| VCEO | Collector-Emitter Voltage | 300 | V | ||
| VEBO | Emitter-Base Voltage | 3 | V | ||
| IC | Collector Current-Continuous | 0.5 | A | ||
| PC | Collector Power Dissipation | TC=25 | 20 | W | |
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature Range | -65 | 150 | ||
| Rth j-c | Thermal Resistance,Junction to Case | 6.25 | /W |
2409302232_JSMSEMI-MJE340G_C5296719.pdf
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