High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner applications in TO-3 package
Key Attributes
Model Number:
MJ15025-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500uA
Pd - Power Dissipation:
250W
Transition Frequency(fT):
4MHz
Type:
PNP
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
250V
Mfr. Part #:
MJ15025-JSM
Package:
TO-3
Product Description
Product Overview
The MJ15023-MJ15025 series are PNP power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a high DC current gain (hFE = 15 Min @ IC = 8A), an excellent safe operating area, and are complementary to MJ15022 and MJ15024 types. Packaged in a TO-3 case.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-3
Technical Specifications
| Symbol | Parameter | Conditions | MJ15023 Value | MJ15025 Value | Unit |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=0.1A ;IB=0 | -200 | -250 | V |
| VCEsat-1 | Collector-emitter saturation voltage | IC=8A; IB=0.8A | -1.4 | V | |
| VCEsat-2 | Collector-emitter saturation voltage | IC=16A; IB=3.2A | -4.0 | V | |
| VBE | Base-emitter on voltage | IC=8A ; VCE=4V | -2.2 | V | |
| ICEO | Collector cut-off current | VCE=150V; IB=0 | -0.5 | mA | |
| VCE=200V; IB=0 | -0.5 | mA | |||
| ICEX | Collector cut-off current | VCE=200V; VBE(off)=1.5V | -0.25 | mA | |
| VCE=250V; VBE(off)=1.5V | -0.25 | mA | |||
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | -0.5 | mA | |
| hFE-1 | DC current gain | IC=8A ; VCE=4V | 15 | 60 | |
| IC=8A ; VCE=4V | 15 | 60 | |||
| hFE-2 | DC current gain | IC=16A ; VCE=4V | 5 | ||
| Is/b | Second breakdown collector current with base forward biased | VCE=50Vdc,t=0.5 s,Nonrepetitive | -5.0 | A | |
| Is/b | Second breakdown collector current with base forward biased | VCE=80Vdc,t=0.5 s,Nonrepetitive | -2.0 | A | |
| COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | 500 | pF | |
| fT | Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz | |
| VCBO | Collector-base voltage | Open emitter | -350 | -400 | V |
| VCEO | Collector-emitter voltage | Open base | -200 | -250 | V |
| VEBO | Emitter-base voltage | Open collector | -5 | V | |
| IC | Collector current | -16 | A | ||
| ICM | Collector current-peak | -30 | A | ||
| IB | Base current | -5 | A | ||
| PD | Total power dissipation | TC=25 | 250 | W | |
| Tj | Junction temperature | 150 | |||
| Tstg | Storage temperature | -65~200 | |||
| Rth j-c | Thermal resistance junction to case | 0.70 | /W | ||
2307121054_JSMSEMI-MJ15025-JSM_C7436407.pdf
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