High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits
Product Overview
The MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-3
Technical Specifications
| Symbol | Parameter | Conditions | MJ15022G | MJ15024G | Unit |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=0.1A ;IB=0 | 200 | 250 | V |
| VCEsat-1 | Collector-emitter saturation voltage | IC=8A; IB=0.8A | 1.4 | V | |
| VCEsat-2 | Collector-emitter saturation voltage | IC=16A; IB=3.2A | 4.0 | V | |
| VBE | Base-emitter on voltage | IC=8A ; VCE=4V | 2.2 | V | |
| ICEO | Collector cut-off current | VCE=150V; IB=0 | 200 | - | mA |
| VCE=200V; IB=0 | - | 0.5 | mA | ||
| ICEX | Collector cut-off current | VCE=200V; VBE(off)=1.5V | - | 0.25 | mA |
| VCE=250V; VBE(off)=1.5V | - | 0.25 | mA | ||
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | 0.5 | mA | |
| hFE-1 | DC current gain | IC=8A ; VCE=4V | 15-60 | ||
| IC=8A ; VCE=4V | 15 | - | |||
| hFE-2 | DC current gain | IC=16A ; VCE=4V | 5 | ||
| Is/b | Second breakdown collector current with base forward biased | VCE=50Vdc,t=0.5 s | 5.0 | A | |
| VCE=80Vdc,t=0.5 s,Nonrepetitive | 2.0 | A | |||
| COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | 500 | pF | |
| fT | Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz | |
| Rth j-c | Thermal resistance junction to case | 0.70 | /W | ||
2401121850_JSMSEMI-MJ15022G-JSM_C20606852.pdf
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