Compact miniature P channel MOSFET JSCJ BSS84 designed for loss and energy conservation applications
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
BSS84 P-CHANNEL MOSFET
These miniature surface mount MOSFETs reduce power loss and conserve energy, making them ideal for use in small power management circuitry. They offer energy efficiency, low threshold voltage, and high-speed switching in a miniature surface mount package that saves board space. Applications include DC-DC converters, load switching, and power management in portable and battery-powered products such as computers, printers, cellular, and cordless telephones.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -50 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -0.13 | A | |||
| Pulsed Drain Current (note 1) | IDM | @tp <10 µs | -0.52 | A | ||
| Power Dissipation | PD | (Ta=25°C unless otherwise noted) | 225 | mW | ||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 556 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds | TL | 260 | °C | |||
| ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -50 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-50V,VGS = 0V | -15 | µA | ||
| VDS =-25V,VGS = 0V | -0.1 | µA | ||||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±5 | µA | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =-250µA | -0.9 | -1.6 | -2 | V |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =-5V, ID =-0.1A | 5.8 | 10 | Ω | |
| VGS =-10V, ID =-0.1A | 4.5 | 8 | Ω | |||
| Forward transconductance (note 1) | gFS | VDS=-25V; ID=-100mA | 50 | mS | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 30 | pF | ||
| Output capacitance | Coss | 10 | pF | |||
| Reverse transfer capacitance | Crss | 5 | pF | |||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=-15V, RL=50Ω, ID =-2.5A | 2.5 | ns | ||
| Turn-on rise time | tr | 1 | ns | |||
| Turn-off delay time | td(off) | 16 | ns | |||
| Turn-off fall time | tf | 8 | ns | |||
| SOURCE−DRAIN DIODE CHARACTERISTICS | ||||||
| Continuous Current | IS | -0.13 | A | |||
| Pulsed Current | ISM | -0.52 | A | |||
| Diode forward voltage (note 3) | VSD | IS=-0.13A, VGS = 0V | -2.2 | V | ||
2410121440_JSCJ-BSS84_C114481.pdf
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