P Channel MOSFET JSCJ CJE3139K Designed for Battery Management and Logic Switching Applications
Key Attributes
Model Number:
CJE3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@4.5V,0.8A
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Input Capacitance(Ciss):
170pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
CJE3139K
Package:
SOT-523
Product Description
Product Overview
The CJE3139K is a P-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This lead-free product offers efficient switching performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJE3139K
- Package Type: SOT-523
- Certifications: Lead Free Product is Acquired
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | (note 1) | -0.66 | A | ||
| Pulsed Drain Current | IDM | (tp=10s) | -1.2 | A | ||
| Power Dissipation | PD | (note 1) | 150 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | (note 1) | 833 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10 s) | 260 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-20V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 20 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A (note 2) | -0.35 | -1.1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-1A (note 2) | 520 | m | ||
| VGS =-2.5V, ID =-0.8A (note 2) | 700 | m | ||||
| VGS =-1.8V, ID =-0.5A (note 2) | 950 | m | ||||
| Forward transconductance | gFS | VDS =-10V, ID =-0.54A (note 2) | 1.2 | S | ||
| Diode forward voltage | VSD | IS=-0.5A, VGS = 0V | -1.2 | V | ||
| Dynamic Characteristics (note 4) | ||||||
| Input capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | 170 | pF | |
| Output capacitance | Coss | VDS =-16V,VGS =0V,f =1MHz | 15 | 25 | pF | |
| Reverse transfer capacitance | Crss | VDS =-16V,VGS =0V,f =1MHz | 9 | 15 | pF | |
| Switching Characteristics (note 4) | ||||||
| Turn-on delay time | td(on) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10 (note 3) | 9 | ns | ||
| Turn-on rise time | tr | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10 (note 3) | 5.8 | ns | ||
| Turn-off delay time | td(off) | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10 (note 3) | 32.7 | ns | ||
| Turn-off fall time | tf | VGS=-4.5V,VDS=-10V, ID =-200mA,RGEN=10 (note 3) | 20.3 | ns | ||
2410121342_JSCJ-CJE3139K_C70991.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
