N Channel Power MOSFET JSCJ CJAC130SN04L with Avalanche and Commutation Mode Energy Pulse Capability
Key Attributes
Model Number:
CJAC130SN04L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
26pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
2.62nF@20V
Gate Charge(Qg):
47.7nC@10V
Mfr. Part #:
CJAC130SN04L
Package:
PDFNWB5x6-8L
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize SGT technology, offering minimized on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are ideal for high efficiency, fast switching applications such as battery switches, load switches, and LED applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand and website)
- Material: Plastic-Encapsulate MOSFETS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part No. | Description | VDS (V) | VGS (V) | ID (A) | IDM (A) | EAS (mJ) | PD (W) | RJA (/W) | RJC (/W) | TJ, Tstg () | RDS(ON) Typ @10V (m) | V(BR)DSS (V) |
| CJAC130SN04L | N-Channel Power MOSFET | 40 | 20 | 130 | 390 | 300 | 120 | 62.5 | 1.04 | -55~+150 | 2.0 | 40 |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.5 | 2.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 2.0 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =20A | 2.9 | 3.7 | m | |
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =1MHz | 47.7 | pF | ||
| Output capacitance | Coss | 6 | pF | |||
| Reverse transfer capacitance | Crss | 1.2 | pF | |||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=70A | 26 | nC | ||
| Gate-source charge | Qgs | 8 | nC | |||
| Gate-drain charge | Qgd | 30 | nC | |||
| Turn-on delay time | td(on) | VDS=20V,ID=35A, VGS=10V,RG=1.6 | 32 | ns | ||
| Turn-on rise time | tr | 6 | ns | |||
| Turn-off delay time | td(off) | 47 | ns | |||
| Turn-off fall time | tf | 35 | ns | |||
| Drain-source diode forward voltage | VSD | IS=30A, dISD/dt=100A/s | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 130 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A | |||
| Forward transconductance | gFS | VDS =5V, ID =20A | 43 | S | ||
| Reverse Recovery Time | trr | 47 | ns | |||
| Reverse Recovery Charge | Qrr | 35 | nC |
2410121917_JSCJ-CJAC130SN04L_C5252725.pdf
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