86--136 6733 2386
quality Voltage Regulation Component SMT Type Zener Diode JSMSEMI BZT52C4V7SQ with Tight 5 Percent Tolerance factory
quality Voltage Regulation Component SMT Type Zener Diode JSMSEMI BZT52C4V7SQ with Tight 5 Percent Tolerance factory

Voltage Regulation Component SMT Type Zener Diode JSMSEMI BZT52C4V7SQ with Tight 5 Percent Tolerance

Key Attributes
Model Number: BZT52C4V7SQ
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.47V~4.94V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
4.7V
Impedance(Zzk):
500Ω
Mfr. Part #:
BZT52C4V7SQ
Package:
SOD-323
Product Description

SMT-Type Zener Diode

This SMT-Type Zener Diode series offers a wide selection of zener voltages from 2.0V to 75V with a tight voltage tolerance of 5% for the C-series. Its ultra-low-profile package is well-suited for automated assembly and is MSL Class 1 compatible. Applications include general voltage regulation and mobile & handheld systems.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Package: SOD-323

Technical Specifications

Part Number Marking Code Zener Voltage VZ (V) @ IZT (mA) Maximum Zener Impedance ZZT () @ IZT Maximum Reverse Current IR (A) @ VR (V) Temperature Coefficient @ IZT TC (mV/C)
WY 2.00 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
WX 2.40 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W1 2.70 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W2 3.00 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W3 3.30 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W4 3.60 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W5 3.90 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W6 4.30 5% @ 5mA 600 @ 5mA 1.0 @ 1.0V -3.5 to 0.0
W7 4.70 5% @ 5mA 500 @ 5mA 2.0 @ 1.0V -3.5 to 0.2
W8 5.10 5% @ 5mA 480 @ 5mA 2.0 @ 1.2V -2.7 to 1.2
W9 5.60 5% @ 5mA 400 @ 5mA 2.0 @ 2.5V -2.0 to 2.5
WA 6.20 5% @ 5mA 150 @ 5mA 4.0 @ 3.7V 0.4 to 3.7
WB 6.80 5% @ 5mA 80 @ 5mA 4.0 @ 4.5V 1.2 to 4.5
WC 7.50 5% @ 5mA 80 @ 5mA 5.0 @ 5.3V 2.5 to 5.3
WD 8.20 5% @ 5mA 80 @ 5mA 5.0 @ 6.2V 3.2 to 6.2
WE 9.10 5% @ 5mA 100 @ 5mA 6.0 @ 7.0V 3.8 to 7.0
WF 10.00 5% @ 5mA 150 @ 5mA 7.0 @ 8.0V 4.5 to 8.0
WG 11.00 5% @ 5mA 150 @ 5mA 8.0 @ 9.0V 5.4 to 9.0
WH 12.00 5% @ 5mA 150 @ 5mA 8.0 @ 10.0V 6.0 to 10.0
WI 13.00 5% @ 5mA 170 @ 5mA 8.0 @ 11.0V 7.0 to 11.0
WJ 15.00 5% @ 5mA 200 @ 5mA 10.5 @ 13.0V 9.2 to 13.0
WK 16.00 5% @ 5mA 200 @ 5mA 11.2 @ 14.0V 10.4 to 14.0
WL 18.00 5% @ 5mA 225 @ 5mA 12.6 @ 16.0V 12.4 to 16.0
WM 20.00 5% @ 5mA 225 @ 5mA 14.0 @ 18.0V 14.4 to 18.0
WN 22.00 5% @ 5mA 250 @ 5mA 15.4 @ 20.0V 16.4 to 20.0
WO 24.00 5% @ 5mA 250 @ 5mA 16.8 @ 22.0V 18.4 to 22.0
WP 27.00 2% @ 2mA 300 @ 2mA 18.9 @ 25.3V 21.4 to 25.3
WQ 30.00 2% @ 2mA 300 @ 2mA 21.0 @ 29.4V 24.4 to 29.4
WR 33.00 2% @ 2mA 325 @ 2mA 23.1 @ 33.4V 27.4 to 33.4
WS 36.00 2% @ 2mA 350 @ 2mA 25.2 @ 37.4V 30.4 to 37.4
WT 39.00 2% @ 2mA 350 @ 2mA 27.3 @ 41.2V 33.4 to 41.2
WU 43.00 2% @ 2mA 700 @ 2mA 32.0 @ 12.0V 10.0 to 12.0
WV 47.00 2% @ 2mA 750 @ 2mA 35.0 @ 12.0V 10.0 to 12.0
WW 51.00 2% @ 2mA 750 @ 2mA 38.0 @ 12.0V 10.0 to 12.0
WX 56.00 2% @ 2mA 400 @ 2mA 39.2 @ 12.0V 10.0 to 12.0
WY 62.00 2% @ 2mA 423 @ 2mA 43.4 @ 12.0V 10.0 to 12.0
WZ 68.00 2% @ 2mA 447 @ 2mA 47.6 @ 12.0V 10.0 to 12.0
6H 75.00 2% @ 2mA 470 @ 2mA 52.5 @ 12.0V 10.0 to 12.0

2401051649_JSMSEMI-BZT52C4V7SQ_C2857108.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications factory
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.