Low RDS on Lead Free N Channel MOSFET JSCJ CJAA3134K Surface Mount Device with Gate ESD Protection
Key Attributes
Model Number:
CJAA3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
800mΩ@1.8V,0.45A
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
CJAA3134K
Package:
WBFBP-03E
Product Description
Product Overview
The CJAA3134K is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. This lead-free product features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. It is complementary to the CJAA3139K and is suitable for load/power switching, interfacing, battery management in portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: WBFBP-03E
- Model: CJAA3134K
- Channel Type: N-Channel
- Package: Plastic-Encapsulate, Surface Mount
- Certifications: Lead Free Product is Acquired
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Typical Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current (note 1) | ID | 0.75 | A | |||
| Pulsed Drain Current (tp=10us) | IDM | 1.8 | A | |||
| Power Dissipation (note 1) | PD | 100 | mW | |||
| Thermal Resistance from Junction to Ambient (note 1) | RθJA | 1250 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | 150 | °C | ||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | °C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±20 | uA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 0.35 | 1.1 | V | |
| Drain-source on-resistance(note 2) | RDS(on) | VGS =4.5V, ID =0.65A | 380 | mΩ | ||
| VGS =2.5V, ID =0.55A | 450 | mΩ | ||||
| VGS =1.8V, ID =0.45A | 800 | mΩ | ||||
| Forward tranconductance(note 2) | gFS | VDS =10V, ID =0.8A | 1.6 | S | ||
| Diode forward voltage | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| DYNAMIC PARAMETERS(note 4) | ||||||
| Input Capacitance | Ciss | VDS =16V,VGS =0V,f =1MHz | 79 | 120 | pF | |
| Output Capacitance | Coss | 13 | 20 | pF | ||
| Reverse Transfer Capacitance | Crss | 9 | 15 | pF | ||
| SWITCHING PARAMETERS (note 4) | ||||||
| Turn-on delay time (note 3) | td(on) | VDD=4.5V,VGS=10V, ID=500mA,RGEN=10Ω | 6.7 | ns | ||
| Turn-on rise time (note 3) | tr | 4.8 | ns | |||
| Turn-off delay time (note 3) | td(off) | 17.3 | ns | |||
| Turn-off fall time (note 3) | tf | 7.4 | ns | |||
2409301633_JSCJ-CJAA3134K_C504060.pdf
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