N Channel Power MOSFET JSCJ CJQ4410 featuring trench technology and excellent shoot through immunity
Key Attributes
Model Number:
CJQ4410
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7.5A
Operating Temperature -:
-
RDS(on):
20mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
387pF
Number:
1 N-channel
Output Capacitance(Coss):
625pF
Input Capacitance(Ciss):
9.13nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
CJQ4410
Package:
SOP-8
Product Description
Product Overview
The CJQ4410 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is ideal for low-side switching applications in Notebook CPU core power conversion, battery switches, and load switches.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if applicable)
- Device Code: CJQ4410
- Marking: Q4410
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 7.5 | A | ||
| Pulsed Drain Current | IDM | 50 | A | |||
| Single Pulsed Avalanche Energy | EAS | VDD=50V,L=0.5mH, RG=25, Starting TJ = 25C | 72 | mJ | ||
| Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.3 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 9 | 13.5 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =5A | 12 | 20 | m | |
| Forward transconductance | gFS | VDS =15V, ID =5A | 8 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 9130 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V, f =1MHz | 625 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V, f =1MHz | 387 | pF | ||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=10A | 40 | nC | ||
| Gate-source charge | Qgs | VDS=15V, VGS=10V, ID=10A | 5.5 | nC | ||
| Gate-drain charge | Qg | VDS=15V, VGS=10V, ID=10A | 3.7 | nC | ||
| Turn-on delay time | td(on) | VDD=25V,ID=1A, VGS=10V,RG=6, RL=25 | 15 | ns | ||
| Turn-on rise time | tr | VDD=25V,ID=1A, VGS=10V,RG=6, RL=25 | 15 | ns | ||
| Turn-off delay time | td(off) | VDD=25V,ID=1A, VGS=10V,RG=6, RL=25 | 60 | ns | ||
| Turn-off fall time | tf | VDD=25V,ID=1A, VGS=10V,RG=6, RL=25 | 25 | ns | ||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 0.2 | 0.8 | ||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=2.3A | 1.1 | V | ||
| Continuous drain-source diode forward current | IS | 7.5 | A | |||
| Pulsed drain-source diode forward current | ISM | 50 | A | |||
2409272231_JSCJ-CJQ4410_C139832.pdf
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