High Density Cell Design P Channel Power MOSFET JSCJ CJQ4407A with Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
CJQ4407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
RDS(on):
17mΩ@6V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
277pF
Input Capacitance(Ciss):
2.015nF
Pd - Power Dissipation:
2.65W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
CJQ4407A
Package:
SOP-8
Product Description
Product Overview
The CJQ4407A is a P-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. This device is suitable for a wide variety of applications, offering super high density cell design for extremely low RDS(ON) in a surface mount package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Device Code: CJQ4407A
- Equivalent Device Code: Q4407A
- Package: SOP8 Plastic-Encapsulate
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250uA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1.0 | uA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.2 | -1.6 | -2.2 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 10.5 | m | ||
| VGS =-6V, ID =-8A | 11.5 | m | ||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 2015 | pF | ||
| Output capacitance | Coss | 277 | pF | |||
| Reverse transfer capacitance | Crss | 210 | pF | |||
| Total gate charge | Qg | VGS=-10V, VDD=-15V, ID=-10A | 74 | nC | ||
| Gate-source charge | Qgs | 17 | nC | |||
| Gate-drain charge | Qgd | 6.3 | nC | |||
| Turn-on delay time | td(on) | VDD=-15V, VGS=-10V, RL=1.25, RG=3 | 14 | ns | ||
| Turn-on rise time | tr | 27 | ns | |||
| Turn-off delay time | td(off) | 78 | ns | |||
| Turn-off fall time | tf | 38 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -11 | A | |||
| Pulsed drain-source diode forward current | ISM | -44 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25 | -11 | A | ||
| Pulsed Drain Current | IDM | -44 | A | |||
| Single Pulsed Avalanche Energy | EAS | 110 | mJ | |||
| Power Dissipation | PD | TA=25 | 2.65 | W | ||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RJA | Steady State, t 10s | 47 | 95 | /W | |
2504251720_JSCJ-CJQ4407A_C48586618.pdf
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