Dual N Channel MOSFET JSCJ CJL8820 Featuring ESD Protection and Suitable for Load Switch Applications
Key Attributes
Model Number:
CJL8820
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
2 N-Channel
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
8nC
Mfr. Part #:
CJL8820
Package:
SOT-23-6L
Product Description
Product Overview
The CJL8820 is a dual N-Channel MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration. This device is packaged in a SOT-23-6L plastic encapsulation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by brand and website)
- Material: Plastic Encapsulate
- Device Code: L8820
- Date Code: XX (variable)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 5 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.77 | 1.1 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3A | 15 | 21 | m | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 17 | 24 | m | |
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =3A | 18 | 28 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 22 | 32 | m | |
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =3A | 34 | 50 | m | |
| Forward tranconductance | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 650 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 140 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 60 | pF | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =6A | 8 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =6A | 2.5 | nC | ||
| Gate-drain charge | Qg | VDS =10V,VGS =4.5V,ID =6A | 3 | nC | ||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 0.5 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 1 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 12 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 4 | ns | ||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | (note1) | 25 | A | ||
| Thermal Resistance Junction to Ambient | R JA | (note1) | 208.3 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10 s) | 260 |
2410121917_JSCJ-CJL8820_C504154.pdf
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