Plastic Encapsulate N Channel MOSFET JSCJ CJM2004 with TrenchFET Technology and DFNWB2x2 6L J Package
Key Attributes
Model Number:
CJM2004
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
210pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.85nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
17nC@4.5V
Mfr. Part #:
CJM2004
Package:
DFNWB-6L-J(2x2)
Product Description
Product Overview
The CJM2004 is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring TrenchFET technology for excellent RDS(on), low gate charge, and high power/current handling capability. Packaged in a surface-mount DFNWB2x2-6L-J, it is ideal for battery protection, load switching, and power management applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJM2004
- Package: DFNWB2x2-6L-J
- Material: Plastic-Encapsulate MOSFETS
- Origin: China (implied by brand and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | (Ta=25 unless otherwise noted) | 15 | A | ||
| Pulsed Drain Current (note 1) | IDM | 50 | A | |||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 250 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55~+150 | ||||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage (note 3) | VGS(th) | VDS =VGS, ID =250µA | 0.7 | 1.0 | V | |
| Drain-source on-resistance (note 3) | RDS(on) | VGS =4.5V, ID =4A | 6.0 | 7.5 | mΩ | |
| VGS =3.8V, ID =4A | 6.5 | 8.5 | mΩ | |||
| VGS =3.1V, ID =4A | 7.2 | 9.0 | mΩ | |||
| VGS =2.5V, ID =4A | 8.5 | 12.0 | mΩ | |||
| Forward tranconductance (note 3) | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage (note 3) | VSD | IS=1.25A, VGS = 0V | 0.5 | 1.0 | V | |
| DYNAMIC CHARACTERISTICS (note4) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1850 | pF | ||
| Output Capacitance | Coss | 250 | pF | |||
| Reverse Transfer Capacitance | Crss | 210 | pF | |||
| SWITCHING CHARACTERISTICS (note 4) | ||||||
| Turn-on delay time | td(on) | VDD=10V,VGS=5V, RL=1.35Ω ,RGEN=3Ω | 2.2 | ns | ||
| Turn-on rise time | tr | 5.9 | ns | |||
| Turn-off delay time | td(off) | 40 | ns | |||
| Turn-off fall time | tf | 90 | ns | |||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=7A | 17 | nC | ||
| Gate-Source Charge | Qgs | 2.0 | nC | |||
| Gate-Drain Charge | Qgd | 5.1 | nC | |||
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.700 - 0.800 | 0.028 - 0.032 |
| A1 | 0.000 - 0.050 | 0.000 - 0.002 |
| A3 | 0.200MIN. | 0.008MIN. |
| D | 1.924 - 2.076 | 0.076 - 0.082 |
| D1 | 0.800 - 1.000 | 0.031 - 0.039 |
| D2 | 0.200 - 0.400 | 0.008 - 0.016 |
| E | 1.924 - 2.076 | 0.076 - 0.082 |
| E1 | 0.850 - 1.050 | 0.033 - 0.041 |
| E2 | 0.460 - 0.660 | 0.018 - 0.026 |
| b | 0.250 - 0.350 | 0.010 - 0.014 |
| e | 0.650TYP. | 0.026TYP. |
| k | 0.203REF. | 0.008REF. |
| L | 0.174 - 0.326 | 0.007 - 0.013 |
Suggested Pad Layout
(Image/Diagram for pad layout is not provided in text, therefore omitted.)
Tape and Reel
(Image/Diagram for tape and reel is not provided in text, therefore omitted.)
Notice
JSCJ reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.
2410121715_JSCJ-CJM2004_C504120.pdf
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