N Channel Power MOSFET JSCJ CJU65SN10L Featuring Shielded Gate Trench Technology and Low Gate Charge
Key Attributes
Model Number:
CJU65SN10L
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V,65A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
1.285nF@50V
Gate Charge(Qg):
23.4nC@10V
Mfr. Part #:
CJU65SN10L
Package:
TO-252-2L
Product Description
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJU65SN10L N-Channel Power MOSFET
The CJU65SN10L is an N-Channel Power MOSFET utilizing shielded gate trench technology and design. This technology provides excellent RDS(ON) with low gate charge, making it suitable for a wide variety of power switching applications. Key features include excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU65SN10L
- Material: Plastic-Encapsulate
- Package Type: TO-252-2L
- Color: Green molding compound device (if applicable, indicated by solid dot)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 65 | A | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Single Pulsed Avalanche Energy | EAS | 125 | mJ | |||
| Power Dissipation | PD | Ta=25 | 125 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance Junction to Case | RJC | 1.0 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| OFF CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 | 100 | A | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.4 | 2.1 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 11 | m | ||
| VGS =4.5V, ID =10A | 15.5 | m | ||||
| DYNAMIC CHARACTERISTICS | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =500kHz | 1285 | pF | ||
| Output capacitance | Coss | 275 | pF | |||
| Reverse transfer capacitance | Crss | 5.5 | pF | |||
| SWITCHING CHARACTERISTICS | ||||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=20A | 23.4 | nC | ||
| Gate-source charge | Qgs | 2.7 | nC | |||
| Gate-drain charge | Qg d | 5.1 | nC | |||
| Turn-on delay time | td(on) | VDD=50V,RL=3.6, VGS=10V,RG=10 | 30 | ns | ||
| Turn-on rise time | tr | 37 | ns | |||
| Turn-off delay time | td(off) | 152 | ns | |||
| Turn-off fall time | tf | 94 | ns | |||
| DRAIN-SOURCE DIODE CHARACTERISTICS | ||||||
| Drain-source diode forward voltage | VSD | IS=20A, VGS=0V | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 65 | A | |||
| Pulsed drain-source diode forward current | ISM | 260 | A | |||
2410121917_JSCJ-CJU65SN10L_C5116362.pdf
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