Power MOSFET JSCJ CJQ14SN06 N Channel Device with Shielded Gate Trench Technology and Low Gate Charge
Key Attributes
Model Number:
CJQ14SN06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.7mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
11pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
1.634nF@30V
Gate Charge(Qg):
39.8nC@10V
Mfr. Part #:
CJQ14SN06
Package:
SOP-8
Product Description
Product Overview
The CJQ14SN06 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. This device is ideal for use as a high-side switch in SMPS and as a load switch.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: Q14SN06
- Material: Plastic-Encapsulate MOSFETS
- Color: Green molding compound (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =12A | 9.7 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =10A | 12.8 | m | ||
| Forward transconductance | gFS | VDS = 5V, ID=10A | 18 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =30V,VGS =0V, f =1MHz | 1257 | pF | ||
| Output capacitance | Coss | 302 | pF | |||
| Reverse transfer capacitance | Crss | 14 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 39.8 | nC | ||
| Gate-source charge | Qgs | 6.2 | nC | |||
| Gate-drain charge | Qg d | 8.2 | nC | |||
| Turn-on delay time | td(on) | VDS=30V,ID=10A , VGS=10V,RG=10 | 7.3 | ns | ||
| Turn-on rise time | tr | 3.5 | ns | |||
| Turn-off delay time | td(off) | 19.9 | ns | |||
| Turn-off fall time | tf | 3.1 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=14A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 14 | A | |||
| Pulsed drain-source diode forward current | ISM | 48 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 14 | A | |||
| Pulsed Drain Current | IDM | 48 | A | |||
| Maximum Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 89 | /W | |||
| Single Pulsed Avalanche Energy | EAS | Starting TJ = 25. VDD=15V,VGS=10V, L=0.1mH,Rg=25 | 12.8 | mJ | ||
| Lead Temperature for Soldering Purposes(1/8 from case for 10s) | TL | 260 | ||||
2410121917_JSCJ-CJQ14SN06_C504130.pdf
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