P Channel MOSFET JSCJ CJ2301 S1 in Compact SOT 23 Package for Load Switching in Portable Electronics
Key Attributes
Model Number:
CJ2301 S1
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
142mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ2301 S1
Package:
SOT-23
Product Description
Product Overview
The CJ2301 is a P-Channel MOSFET in a SOT-23 package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for enhanced performance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Marking: S1
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | Ta=25 | -2.3 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | -10 | A | ||
| Continuous Source-Drain Diode Current | IS | Ta=25 | -0.72 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (t 5s) | 357 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-2.8A | 0.090 | 0.112 | Ω | |
| Drain-source on-state resistance | RDS(on) | VGS =-2.5V, ID =-2.0A | 0.110 | 0.142 | Ω | |
| Forward transconductance | gfs | VDS =-5V, ID =-2.8A | 6.5 | S | ||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 405 | pF | ||
| Output capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 75 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 55 | pF | ||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-3A | 5.5 | 10 | nC | |
| Total gate charge | Qg | VDS =-10V,VGS =-2.5V,ID =-3A | 3.3 | 6 | nC | |
| Gate-source charge | Qgs | VDS =-10V,VGS =-4.5V,ID =-3A | 0.7 | nC | ||
| Gate-drain charge | Qgd | VDS =-10V,VGS =-4.5V,ID =-3A | 1.3 | nC | ||
| Gate resistance | Rg | f =1MHz | 6.0 | Ω | ||
| Turn-on delay time | td(on) | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω | 11 | 20 | ns | |
| Rise time | tr | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω | 35 | 60 | ns | |
| Turn-off delay time | td(off) | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω | 30 | 50 | ns | |
| Fall time | tf | VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω | 10 | 20 | ns | |
| Continuous source-drain diode current | IS | TC=25 | -1.3 | A | ||
| Pulse diode forward current | ISM | TC=25 | -10 | A | ||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V |
2410121517_JSCJ-CJ2301-S1_C8547.pdf
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