N Channel MOSFET JSCJ BSS123 Featuring Rugged Design and Low RDS ON for Power Switching Applications
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
RDS(on):
6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
29pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.4nC
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BSS123 is an N-Channel MOSFET in a SOT-23 package. It features a high-density cell design for extremely low RDS(ON), making it a voltage-controlled small signal switch that is rugged and reliable. This MOSFET is suitable for applications such as small servo motor controls, power MOSFET gate drivers, and general switching applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: BSS123
- Package Type: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | VDS | 100 | V | |||
| VGS | ±20 | V | ||||
| ID | (note 1) | 0.17 | A | |||
| IDM | (tp=10us) | 0.68 | A | |||
| IS | 0.17 | A | ||||
| STATIC CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID =250µA | 100 | V | ||
| IDSS | VDS =100V,VGS = 0V | 1 | µA | |||
| IGSS | VGS =±20V, VDS = 0V | ±50 | nA | |||
| ON-RESISTANCE | RDS(on) | VGS =4.5V, ID =0.17A | 10 | Ω | ||
| RDS(on) | VGS =10V, ID =0.17A | 6 | Ω | |||
| gFS | VDS =10V, ID =170mA | 80 | mS | |||
| DYNAMIC CHARACTERISTICS | Ciss | VDS =25V,VGS =0V,f =1MHz | 29 | 60 | pF | |
| Coss | 10 | 15 | pF | |||
| Crss | 2 | 6 | pF | |||
| SWITCHING CHARACTERISTICS | td(on) | VGS=10V,VDD=30V, ID=2.8A,RGEN=50Ω | 8 | ns | ||
| tr | 8 | ns | ||||
| td(off) | 13 | ns | ||||
| tf | 16 | ns |
2410121642_JSCJ-BSS123_C79015.pdf
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