High Current Capability P Channel Transistor JSCJ CJ3401 with Plastic Encapsulate and Compact SOT 23
Product Overview
The CJ3401 is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOT-23 package. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for various electronic applications requiring efficient power switching.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Name: CJ3401
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Marking: R1
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | -1 | A | |
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.2A | 65 | m | ||
| VGS =-4.5V, ID =-4A | 75 | m | ||||
| VGS =-2.5V,ID=-1A | 90 | m | ||||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.7 | -1.3 | V | |
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 954 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz | 115 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz | 77 | pF | ||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.3 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 3.2 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 38.2 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 12 | ns | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V |
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 12 | V |
| Continuous Drain Current | ID | -4.2 | A |
| Power Dissipation | PD | 350 | mW |
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55~+150 |
2410121648_JSCJ-CJ3401_C13799.pdf
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