High Current Capability P Channel Transistor JSCJ CJ3401 with Plastic Encapsulate and Compact SOT 23

Key Attributes
Model Number: CJ3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ3401
Package:
SOT-23
Product Description

Product Overview

The CJ3401 is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOT-23 package. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for various electronic applications requiring efficient power switching.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Product Name: CJ3401
  • Package Type: SOT-23
  • Material: Plastic-Encapsulate
  • Marking: R1

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-30V
Zero gate voltage drain currentIDSSVDS =-24V,VGS = 0V-1-1A
Gate-source leakage currentIGSSVGS =12V, VDS = 0V100nA
Drain-source on-resistanceRDS(on)VGS =-10V, ID =-4.2A65m
VGS =-4.5V, ID =-4A75m
VGS =-2.5V,ID=-1A90m
Forward tranconductancegFSVDS =-5V, ID =-5A7S
Gate threshold voltageVGS(th)VDS =VGS, ID =-250A-0.7-1.3V
Input capacitanceCissVDS =-15V,VGS =0V,f =1MHz954pF
Output capacitanceCossVDS =-15V,VGS =0V,f =1MHz115pF
Reverse transfer capacitanceCrssVDS =-15V,VGS =0V,f =1MHz77pF
Turn-on delay timetd(on)VGS=-10V,VDS=-15V, RL=3.6,RGEN=66.3ns
Turn-on rise timetrVGS=-10V,VDS=-15V, RL=3.6,RGEN=63.2ns
Turn-off delay timetd(off)VGS=-10V,VDS=-15V, RL=3.6,RGEN=638.2ns
Turn-off fall TimetfVGS=-10V,VDS=-15V, RL=3.6,RGEN=612ns
Diode forward voltageVSDIS=-1A,VGS=0V-1V
ParameterSymbolValueUnit
Drain-Source VoltageVDS-30V
Gate-Source VoltageVGS12V
Continuous Drain CurrentID-4.2A
Power DissipationPD350mW
Thermal Resistance from Junction to AmbientRJA357/W
Junction TemperatureTJ150
Storage TemperatureTSTG-55~+150

2410121648_JSCJ-CJ3401_C13799.pdf

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