High Stability N Channel Power MOSFET JSCJ CJAB30N02 with Fully Characterized Avalanche Voltage and Current
Key Attributes
Model Number:
CJAB30N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
30A
RDS(on):
10.5mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
455pF
Number:
1 N-channel
Output Capacitance(Coss):
475pF
Input Capacitance(Ciss):
2.4nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
CJAB30N02
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB30N02 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, excellent heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJAB30N02
- Package: NWB3.33.3-8L Plastic-Encapsulate
- Origin: China (implied by company name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =10V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 0.7 | 1.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 6.2 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =2.5V, ID =10A | 8.2 | m | ||
| Forward transconductance | gFS | VDS =5V, ID =10A | 22 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =8V,VGS =0V, f =1MHz | 1218 | pF | ||
| Output capacitance | Coss | 236 | ||||
| Reverse transfer capacitance | Crss | 226 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=10V, ID=10A | 30 | nC | ||
| Gate-source charge | Qgs | 1.8 | ||||
| Gate-drain charge | Qg d | 3.3 | ||||
| Turn-on delay time | td(on) | VDS=10V,RL=0.75, VGS=4V,RG=3 | 31 | ns | ||
| Turn-on rise time | tr | 14 | ||||
| Turn-off delay time | td(off) | 64 | ||||
| Turn-off fall time | tf | 22 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 26 | A | |||
| Pulsed drain-source diode forward current | ISM | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TC=25 | 30 | A | ||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulsed Avalanche Energy | EAS | 420 | mJ | |||
| Maximum Power Dissipation | PD | TC=25 | 25 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 5.0 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2403061510_JSCJ-CJAB30N02_C19269051.pdf
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