Plastic Encapsulate N Channel Enhancement Mode Field Effect Transistor JSCJ CJK3400AH with Low RDS
Key Attributes
Model Number:
CJK3400AH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
1 N-channel
Output Capacitance(Coss):
108pF
Input Capacitance(Ciss):
1.155nF
Pd - Power Dissipation:
450mW
Gate Charge(Qg):
-
Mfr. Part #:
CJK3400AH
Package:
SOT-23-3L
Product Description
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect Transistor
The CJK3400AH is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-3L
- Material: Plastic-Encapsulate
- Color: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Drain Current-Pulsed (note 1) | IDM | 30 | A | |||
| Power Dissipation | PD | 450 | mW | |||
| Thermal Resistance from Junction to Ambient (note 2) | RJA | 313 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | A | ||
| Gate-source leakage current | IGSS | VGS =12V, VDS = 0V | 100 | nA | ||
| On Characteristics (note 3) | ||||||
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =5.8A | 27 | m | ||
| VGS =4.5V, ID =5A | 32 | m | ||||
| VGS =2.5V,ID=4A | 48 | m | ||||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.4 | V | |
| Dynamic Characteristics (note 4,5) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 1155 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 108 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 84 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | |||
| Switching Characteristics (note 4,5) | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 5 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 7 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 40 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 6 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 1 | V | ||
2410121742_JSCJ-CJK3400AH_C504110.pdf
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