Surface Mount N Channel MOSFET JSCJ CJ2324 Designed for Load Switch and LED Backlighting Applications
Key Attributes
Model Number:
CJ2324
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
234mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Input Capacitance(Ciss):
190pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
CJ2324
Package:
SOT-23
Product Description
Product Overview
The CJ2324 is an N-Channel MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for surface mount applications. It features a TrenchFET Power MOSFET structure, offering low RDS(ON) for efficient power handling. This MOSFET is suitable for applications such as DC/DC converters, load switches, and LED backlighting in LCD TVs.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJ2324
- Package: SOT-23
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 2 | A | ||
| Pulsed Drain Current | IDM* | 8 | A | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.2 | 2.8 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =1.5A | 234 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =6V, ID =1A | 267 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.5A | 278 | m | ||
| Forward tranconductance | gFS | VDS =20V, ID =1.5A | 2 | S | ||
| Diode forward voltage | VSD | IS=1.3A, VGS = 0V | 1.2 | V | ||
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VDS =50V,VGS =0V,f =1MHz | 190 | pF | ||
| Output Capacitance | Coss | VDS =50V,VGS =0V,f =1MHz | 22 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =50V,VGS =0V,f =1MHz | 13 | pF | ||
| Gate Resistance | Rg | F=1MHz | 0.3 | 2.8 | ||
| SWITCHING PARAMETERS | ||||||
| Turn-on delay time | td(on) | VDD=50V,VGEN=4.5V RL=39,RG=1,ID=1.3A | 45 | ns | ||
| Turn-on rise time | tr | VDD=50V,VGEN=4.5V RL=39,RG=1,ID=1.3A | 39 | ns | ||
| Turn-off delay time | td(off) | VDD=50V,VGEN=4.5V RL=39,RG=1,ID=1.3A | 26 | ns | ||
| Turn-off fall time | tf | VDD=50V,VGEN=4.5V RL=39,RG=1,ID=1.3A | 20 | ns | ||
| Total Gate Charge | Qg | VDS =50V,VGS =4.5V,ID=1.6A | 5.8 | nC | ||
| Gate-Source Charge | Qgs | VDS =50V,VGS =4.5V,ID=1.6A | 0.75 | nC | ||
| Gate-Drain Charge | Qg d | VDS =50V,VGS =4.5V,ID=1.6A | 1.4 | nC | ||
2410121532_JSCJ-CJ2324_C81053.pdf
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