N Channel MOSFET JSCJ CJU80SN10 with Fast Switching Capability and Specified Avalanche Energy Rating
Key Attributes
Model Number:
CJU80SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
3.15nF@50V
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
CJU80SN10
Package:
TO-252-2L
Product Description
Product Overview
The CJU80SN10 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJU80SN10
- Device Code: U80SN10
- Package Type: TO-252-2L Plastic-Encapsulate MOSFETS
- Material: Not specified
- Color: Normal device (or Green molding compound if solid dot is present)
- Origin: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 80 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulsed Avalanche Energy | EAS | 280 | mJ | |||
| Power Dissipation | PD | Ta=25 | 125 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 8.8 | /W | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 | 100 | A | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.3 | 1.9 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 6.2 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =15A | 8.8 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =500KHz | 2100 | pF | ||
| Output capacitance | Coss | 420 | pF | |||
| Reverse transfer capacitance | Crss | 4.5 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=20A | 31.5 | nC | ||
| Gate-source charge | Qgs | 6.0 | nC | |||
| Gate-drain charge | Qgd | 4.8 | nC | |||
| Turn-on delay time | td(on) | VDD=50V,ID=20A, VGS=10V, RG=3 | 10.5 | ns | ||
| Turn-on rise time | tr | 8.5 | ns | |||
| Turn-off delay time | td(off) | 22 | ns | |||
| Turn-off fall time | tf | 5.6 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 80 | A | |||
| Pulsed drain-source diode forward current | ISM | 320 | A | |||
2410122018_JSCJ-CJU80SN10_C3031923.pdf
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