power control using JSCJ CJU30P10 P Channel Power MOSFET with trench technology and low on resistance

Key Attributes
Model Number: CJU30P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 P-Channel
Output Capacitance(Coss):
440pF
Pd - Power Dissipation:
108W
Input Capacitance(Ciss):
12.63nF
Gate Charge(Qg):
196nC@10V
Mfr. Part #:
CJU30P10
Package:
TO-252-2L
Product Description

Product Overview

The CJU30P10 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Its high-density cell design ensures ultra-low On-Resistance.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: CJU30P10
  • Marking: U30P10
  • Material: Plastic-Encapsulate MOSFETS
  • Color: Green molding compound (if solid dot present)

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Off characteristicsV(BR)DSSVGS = 0V, ID =-250A-100V
IDSSVDS =-80V, VGS =0V-1.0A
IGSSVDS =0V, VGS =20V100nA
On characteristicsVGS(th)VDS =VGS, ID =-250A-1-1.5-2.5V
RDS(on)VGS =-10V, ID =-15A3845m
RDS(on)VGS =-4.5V, ID =-15A4155m
Dynamic characteristicsCissVDS =-20V,VGS =0V, f =1MHz6315pF
Cossf =1MHz220pF
Crssf =1MHz50pF
QgVDS=-20V, VGS=-10V, ID=-12A98nC
Switching characteristicsQgs16.2nC
Qgd13.8nC
td(on)VDD=-20V,VGS=-10V, RG=3, ID=-20A10ns
tr18ns
Drain-Source Diode CharacteristicsVSDGS V =0V, IS= -1.2 A-1.0-1.5V
IS-30A

2410121914_JSCJ-CJU30P10_C3031884.pdf

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