power control using JSCJ CJU30P10 P Channel Power MOSFET with trench technology and low on resistance
Product Overview
The CJU30P10 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Its high-density cell design ensures ultra-low On-Resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJU30P10
- Marking: U30P10
- Material: Plastic-Encapsulate MOSFETS
- Color: Green molding compound (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off characteristics | V(BR)DSS | VGS = 0V, ID =-250A | -100 | V | ||
| IDSS | VDS =-80V, VGS =0V | -1.0 | A | |||
| IGSS | VDS =0V, VGS =20V | 100 | nA | |||
| On characteristics | VGS(th) | VDS =VGS, ID =-250A | -1 | -1.5 | -2.5 | V |
| RDS(on) | VGS =-10V, ID =-15A | 38 | 45 | m | ||
| RDS(on) | VGS =-4.5V, ID =-15A | 41 | 55 | m | ||
| Dynamic characteristics | Ciss | VDS =-20V,VGS =0V, f =1MHz | 6315 | pF | ||
| Coss | f =1MHz | 220 | pF | |||
| Crss | f =1MHz | 50 | pF | |||
| Qg | VDS=-20V, VGS=-10V, ID=-12A | 98 | nC | |||
| Switching characteristics | Qgs | 16.2 | nC | |||
| Qgd | 13.8 | nC | ||||
| td(on) | VDD=-20V,VGS=-10V, RG=3, ID=-20A | 10 | ns | |||
| tr | 18 | ns | ||||
| Drain-Source Diode Characteristics | VSD | GS V =0V, IS= -1.2 A | -1.0 | -1.5 | V | |
| IS | -30 | A |
2410121914_JSCJ-CJU30P10_C3031884.pdf
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