Power Management Device JSCJ CJP50P06S P Channel MOSFET with Low Gate Charge and High Reliability
Key Attributes
Model Number:
CJP50P06S
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
35mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
167pF
Number:
1 P-Channel
Output Capacitance(Coss):
184pF
Input Capacitance(Ciss):
3.005nF
Pd - Power Dissipation:
95W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
CJP50P06S
Package:
TO-220-3L-C
Product Description
Product Overview
The CJP50P06S is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Its design emphasizes reliability, ruggedness, and high-density cell structure for ultra-low on-resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: P50P06S
- Marking: P50P06S = Device code; Solid dot = Green molding compound device, if none, the normal device; XXXX = Code
- Package: TO-220-3L-C
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-48V, VGS =0V | 1.0 | 100 | A | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -2.0 | -3.0 | V |
| Static drain-source on-resistance | RDS(on) | VGS =-10V, ID =-20A | 25 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 3005 | pF | ||
| Output capacitance | Coss | 167 | ||||
| Reverse transfer capacitance | Crss | 72 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 35 | nC | ||
| Gate-source charge | Qgs | 10 | ||||
| Gate-drain charge | Qgd | 15 | ||||
| Turn-on delay time | td(on) | VDD=-30V,RG=3 RL=1.5,V GS=-10V | 17 | ns | ||
| Turn-on rise time | tr | 16 | ||||
| Turn-off delay time | td(off) | 39 | ||||
| Turn-off fall time | tf | 44 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-20A | -1.2 | -1.4 | V | |
| Continuous drain-source diode forward current | IS | -50 | A | |||
| Pulsed drain-source diode forward current | ISM | -200 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | -50 | A | ||
| Pulsed Drain Current | IDM | -200 | A | |||
| Single Pulsed Avalanche Energy | EAS | 160 | mJ | |||
| Power Dissipation | PD | TC=25 | 95 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 1.31 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2410121929_JSCJ-CJP50P06S_C19269052.pdf
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