Power MOSFET JSCJ CJAC110SN10A N Channel with Lead Free Package and High Pulsed Drain Current Rating
Key Attributes
Model Number:
CJAC110SN10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Number:
1 N-channel
Output Capacitance(Coss):
1.8nF
Input Capacitance(Ciss):
7.47nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
186nC@10V
Mfr. Part #:
CJAC110SN10A
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC110SN10A is an N-Channel Power MOSFET utilizing shielded gate trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management. Key features include high power and current handling capability, load switching, a high-density cell design for ultra-low RDS(ON), and good stability with high EAS. It is a lead-free product with excellent package heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC110SN10A
- Package: PDFNWB5x6-8L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 110 | A | |||
| Pulsed Drain Current | IDM | 390 | A | |||
| Single Pulsed Avalanche Energy | EAS | 380 | mJ | |||
| Power Dissipation | PD | 125 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | °C/W | |||
| Thermal Resistance from Junction to Case | RθJC | 1.0 | °C/W | |||
| Junction Temperature and Storage Temperature Range | TJ Tstg | -55 | +150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 100 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1.0 | µA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.4 | 1.8 | 2.4 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 3.4 | mΩ | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =20A | 4.5 | mΩ | ||
| Forward transconductance | gFS | VDS =5V, ID =20A | 50 | S | ||
| Input capacitance | Ciss | VDS =50V,VGS =0V, f =1MHz | 3736 | pF | ||
| Output capacitance | Coss | VDS =50V,VGS =0V, f =1MHz | 902 | pF | ||
| Reverse transfer capacitance | Crss | VDS =50V,VGS =0V, f =1MHz | 35 | pF | ||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=20A | 93 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=50V, ID=20A | 9 | nC | ||
| Gate-drain charge | Qg d | VGS=10V, VDS=50V, ID=20A | 34 | nC | ||
| Turn-on delay time | td(on) | VDS=50V, VGS=10V,RG=10Ω, ID=20A | 18 | ns | ||
| Turn-on rise time | tr | VDS=50V, VGS=10V,RG=10Ω, ID=20A | 20 | ns | ||
| Turn-off delay time | td(off) | VDS=50V, VGS=10V,RG=10Ω, ID=20A | 53 | ns | ||
| Turn-off fall time | tf | VDS=50V, VGS=10V,RG=10Ω, ID=20A | 26 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=60A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 110 | A | |||
| Pulsed drain-source diode forward current | ISM | 390 | A |
2410121738_JSCJ-CJAC110SN10A_C2686821.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
