Dual N Channel MOSFET JSCJ CJS8820 Plastic Encapsulate with Integrated ESD Protection and Load Switch
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET
The CJS8820 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with integrated ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name and website)
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | * | 30 | A | ||
| Thermal Resistance from Junction to Ambient | RJA | 125 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | ~ | +150 | ||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | ||||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V (BR) DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 10 | A | ||
| Gate threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =250A | 0.5 | 1.1 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =10V, ID =7A | 14 | 21 | m | |
| VGS =4.5V, ID =6.6A | 16 | 24 | m | |||
| VGS =3.8V, ID =6A | 18 | 28 | m | |||
| VGS =2.5V, ID =5.5A | 22 | 32 | m | |||
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage(note 1) | VSD | IS=1A, VGS = 0V | 1 | V | ||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 650 | pF | ||
| Output Capacitance | Coss | 140 | pF | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | |||
| SWITCHING PARAMETERS(note 2) | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =6A | 8 | nC | ||
| Gate-source charge | Qgs | 2.5 | nC | |||
| Gate-drain charge | Qg d | 3 | nC | |||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.5,RGEN=3 | 0.5 | ns | ||
| Turn-on rise time | tr | 1 | ns | |||
| Turn-off delay time | td(off) | 12 | ns | |||
| Turn-off fall time | tf | 4 | ns | |||
Notes:
1. Pulse Test : Pulse width300s, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.
2410010132_JSCJ-CJS8820_C504162.pdf
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