Dual N Channel MOSFET JSCJ CJS8820 Plastic Encapsulate with Integrated ESD Protection and Load Switch

Key Attributes
Model Number: CJS8820
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
2 N-Channel
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
8nC
Mfr. Part #:
CJS8820
Package:
TSSOP-8
Product Description

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET

The CJS8820 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with integrated ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China (implied by company name and website)
  • Material: Plastic-Encapsulate
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
MAXIMUM RATINGS
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS12V
Continuous Drain CurrentID7A
Pulsed Drain CurrentIDM*30A
Thermal Resistance from Junction to AmbientRJA125/W
Junction TemperatureTj150
Storage TemperatureTstg-55~+150
Lead Temperature for Soldering Purposes(1/8 from case for 10 s)TL260
STATIC PARAMETERS
Drain-source breakdown voltageV (BR) DSSVGS = 0V, ID =250A20V
Zero gate voltage drain currentIDSSVDS =16V,VGS = 0V1A
Gate-body leakage currentIGSSVGS =10V, VDS = 0V10A
Gate threshold voltage (note 1)VGS(th)VDS =VGS, ID =250A0.51.1V
Drain-source on-resistance (note 1)RDS(on)VGS =10V, ID =7A1421m
VGS =4.5V, ID =6.6A1624m
VGS =3.8V, ID =6A1828m
VGS =2.5V, ID =5.5A2232m
Forward tranconductance (note 1)gFSVDS =5V, ID =7A9S
Diode forward voltage(note 1)VSDIS=1A, VGS = 0V1V
DYNAMIC PARAMETERS (note 2)
Input CapacitanceCissVDS =10V,VGS =0V,f =1MHz650pF
Output CapacitanceCoss140pF
Reverse Transfer CapacitanceCrss60pF
SWITCHING PARAMETERS(note 2)
Total gate chargeQgVDS =10V,VGS =4.5V,ID =6A8nC
Gate-source chargeQgs2.5nC
Gate-drain chargeQg d3nC
Turn-on delay timetd(on)VGS=5V,VDD=10V, RL=1.5,RGEN=30.5ns
Turn-on rise timetr1ns
Turn-off delay timetd(off)12ns
Turn-off fall timetf4ns

Notes:
1. Pulse Test : Pulse width300s, duty cycle0.5%.
2. Guaranteed by design, not subject to production testing.


2410010132_JSCJ-CJS8820_C504162.pdf

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