Power MOSFET JSCJ CJAB25N04 N Channel Type with Low Gate Charge and High Current Handling Capability
Key Attributes
Model Number:
CJAB25N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-
RDS(on):
16mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
125pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.98nF@25V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
CJAB25N04
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB25N04 is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, a high-density cell design for ultra-low RDS(ON), and good stability with high EAS. This lead-free product is suitable for SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supplies, and power management applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB25N04
- Material: Plastic-Encapsulate MOSFET
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 25 | A | |||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 141 | mJ | ||
| Power Dissipation | PD | 3 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 41.67 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10s) | 260 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.5 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 7.2 | 9.5 | mΩ | |
| VGS =4.5V, ID =10A | 10 | 16 | mΩ | |||
| Forward transconductance | gFS | VDS =5V, ID =20A | 36 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 1980 | pF | ||
| Output capacitance | Coss | 155 | ||||
| Reverse transfer capacitance | Crss | 125 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=20V, VGS=10V, ID=10A | 48 | nC | ||
| Gate-source charge | Qgs | 5.5 | ||||
| Gate-drain charge | Qgd | 12.3 | ||||
| Turn-on delay time | td(on) | VDS=25V,ID=14A, VGS=10V,RG=3Ω | 12 | ns | ||
| Turn-on rise time | tr | 35 | ||||
| Turn-off delay time | td(off) | 48 | ||||
| Turn-off fall time | tf | 11 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 25 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
2410121806_JSCJ-CJAB25N04_C504066.pdf
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