High Current N Channel Power MOSFET JSCJ CJAC130SN06L with Low Gate Charge and Shielded Gate Trench Design
Key Attributes
Model Number:
CJAC130SN06L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
82pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
130W
Input Capacitance(Ciss):
3.56nF@30V
Gate Charge(Qg):
66.4nC@10V
Mfr. Part #:
CJAC130SN06L
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC130SN06L is a N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities, such as SMPS, general purpose applications, hard switched and high frequency circuits, Uninterruptible Power Supply, and power management. Its high density cell design contributes to ultra-low RDS(ON), and it is a lead-free product with good stability and uniformity.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC130SN06L
- Material: Plastic-Encapsulate
- Type: N-Channel Power MOSFET
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 130 | A | |||
| Pulsed Drain Current | IDM | 390 | A | |||
| Maximum Power Dissipation | PD | 500 | W | |||
| Single Pulsed Avalanche Energy | EAS | 130 | mJ | |||
| Thermal Resistance from Junction to Ambient | RθJA | 62 | °C/W | |||
| Thermal Resistance from Junction to Case | RθJC | 0.96 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =1mA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =48V,VGS = 0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 2.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =20A | 2.6 | 3.2 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =20A | 3.5 | 4.6 | mΩ | |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDS =30V,VGS =10V,ID =25A | 66.4 | nC | ||
| Gate-source charge | Qgs | 8.5 | nC | |||
| Gate-drain charge | Qgd | 16.6 | nC | |||
| Input Capacitance | Ciss | VDS =30V,VGS =0V,f =100kHz | 3560 | pF | ||
| Output Capacitance | Coss | 1530 | pF | |||
| Reverse Transfer Capacitance | Crss | 82 | pF | |||
| Switching Parameters | ||||||
| Turn-on delay time | td(on) | VGS=10V, VDS=30V, RG=10Ω, RL=2.1Ω | 46 | ns | ||
| Turn-on rise time | tr | 70 | ns | |||
| Turn-off delay time | td(off) | 106 | ns | |||
| Turn-off fall time | tf | 98 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Body diode voltage | VSD | IS=30A,VGS=0V | 1.3 | V | ||
2410121918_JSCJ-CJAC130SN06L_C5441189.pdf
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