Low RDS ON P Channel MOSFET JSMSEMI AO4407A in SOP8 Package Suitable for Synchronous Buck Converter
Key Attributes
Model Number:
AO4407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
590pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.73nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
42nC@15V
Mfr. Part #:
AO4407A
Package:
SOP-8
Product Description
Product Overview
The 4407A is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This design minimizes on-state resistance, making it suitable for load switching and PWM applications in synchronous buck converters. Key features include low RDS(ON), high current capability, and a SOP8 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Line: AO4407A
- Technology: Advanced Trench Technology
- Certifications: Full RoHS compliance, Green Product (G)
- Package: SOP8
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | -30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) (TA=25, VGS=10V) | -12 | A | |||
| Continuous Drain Current (ID) (TA=70, VGS=10V) | -9.5 | A | |||
| Pulsed Drain Current (IDM) | -40 | A | |||
| Continuous Source Current (IS) (Diode Conduction) | -2.0 | A | |||
| Power Dissipation (PD) (TA=25) | 2.0 | W | |||
| Power Dissipation (PD) (TA=70) | 1.5 | W | |||
| Operation Junction Temperature (TJ) | 150 | ||||
| Storage Temperature Range (TSTG) | -55 | +150 | |||
| Thermal Resistance (RJA) | Junction to Ambient | 85 | /W | ||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=-250uA | -30 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=-250uA | -1.0 | -2.0 | V | |
| Gate Leakage Current (IGSS) | VDS=0V, VGS=±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-30V, VGS=0 | -1 | uA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-30V, VGS=0, TJ=55 | -5 | uA | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS=-20V, ID=-12 A | 9.8 | 11 | mΩ | |
| Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V, ID=-7.0A | 14.5 | 17 | mΩ | |
| Diode Forward Voltage (VSD) | IS=-2.3A, VGS=0V | -0.75 | -1.0 | V | |
| Total Gate Charge (Qg) | VDS=-15V, VGS=-4.5V, ID=-10A | 30 | 42 | nC | |
| Gate-Source Charge (Qgs) | VDS=-15V, VGS=-4.5V, ID=-10A | 10 | 14 | nC | |
| Gate-Drain Charge (Qgd) | VDS=-15V, VGS=-4.5V, ID=-10A | 10.4 | 14.6 | nC | |
| Input Capacitance (Ciss) | VDS=-15V, VGS=0V, f=1MHz | 3440 | 4812 | pF | |
| Output Capacitance (Coss) | VDS=-15V, VGS=0V, f=1MHz | 506 | 710 | pF | |
| Reverse Transfer Capacitance (Crss) | VDS=-15V, VGS=0V, f=1MHz | 420 | 590 | pF | |
| Turn-On Time (Td(on)) | VDS=-15V, ID=-10A, VGEN=-10V, RG=3.3Ω | 9.3 | 19 | nS | |
| Rise Time (Tr) | VDS=-15V, ID=-10A, VGEN=-10V, RG=3.3Ω | 10.2 | 18 | nS | |
| Turn-Off Time (Td(off)) | VDS=-15V, ID=-10A, VGEN=-10V, RG=3.3Ω | 117 | 232 | nS | |
| Fall Time (Tf) | VDS=-15V, ID=-10A, VGEN=-10V, RG=3.3Ω | 24 | 46 | nS |
2401051656_JSMSEMI-AO4407A_C5155211.pdf
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