N Channel MOSFET JSCJ CJAB75N03U Suitable for SMPS Load Switches and Uninterruptible Power Supplies
Key Attributes
Model Number:
CJAB75N03U
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
75A
RDS(on):
4.3mΩ@4.5V,30A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
319pF
Number:
1 N-channel
Output Capacitance(Coss):
387pF
Input Capacitance(Ciss):
3.12nF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
49.7nC@10V
Mfr. Part #:
CJAB75N03U
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB75N03U is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, Uninterruptible Power Supplies, SMPS, and general-purpose circuits, as well as hard-switched and high-frequency circuits. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB75N03U
- Package Type: Plastic-Encapsulate MOSFETS
- Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.2 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 2.2 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =30A | 3.2 | m | ||
| Gate resistance | Rg | 1.5 | ||||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 3120 | pF | ||
| Output capacitance | Coss | 387 | ||||
| Reverse transfer capacitance | Crss | 319 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=30A | 49.7 | nC | ||
| Gate-source charge | Qgs | 8.1 | ||||
| Gate-drain charge | Qg | 11.3 | ||||
| Turn-on delay time | td(on) | VDS=15V,RL=2, VGS=10V,RG=10 | 48 | ns | ||
| Turn-on rise time | tr | 48 | ||||
| Turn-off delay time | td(off) | 356 | ||||
| Turn-off fall time | tf | 120 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 75 | A | |||
| Pulsed drain-source diode forward current | ISM | 300 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 75 | A | |||
| Pulsed Drain Current | IDM | 300 | A | |||
| Single Pulsed Avalanche Energy | EAS | 83.3 | mJ | |||
| Maximum Power Dissipation | PD | 150 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 44 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 2.82 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2410121858_JSCJ-CJAB75N03U_C19267735.pdf
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