JSCJ AD CJ3400 N Channel MOSFET with AEC Q101 Qualification and Excellent Load Switching Performance
Key Attributes
Model Number:
AD-CJ3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
52mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.05nF
Gate Charge(Qg):
9.5nC@6V
Mfr. Part #:
AD-CJ3400
Package:
SOT-23
Product Description
Product Overview
The AD-CJ3400 is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for extremely low RDS(ON) and exceptional on-state resistance and maximum DC current capability. This AEC-Q101 qualified component is designed for load/power switching and interfacing switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Product Code: AD-CJ3400
- Channel Type: N-Channel MOSFET
- Encapsulation: Plastic-Encapsulated
- Certifications: AEC-Q101 qualified
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | 12 | V | |||
| Continuous drain current | ID | 5.8 | A | |||
| Pulsed drain current | IDM | 1) | 30 | A | ||
| Power dissipation | PD | 350 | mW | |||
| Thermal resistance from junction to ambient | RJA | 357 | C/W | |||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS = 24V, VGS = 0V, Tj = 25C | 1 | A | ||
| Zero gate voltage drain current | IDSS | VDS = 24V, VGS = 0V, Tj = 125C | 1 | mA | ||
| Gate-source leakage current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250A | 0.7 | 0.9 | 1.4 | V |
| Forward transconductance | gfs | 2) VDS = 5V, ID = 5A | 8 | S | ||
| Drain-source on-state resistance | RDS(on) | 2) VGS = 10V, ID = 5.8A | 25 | 35 | m | |
| Drain-source on-state resistance | RDS(on) | 2) VGS = 4.5V, ID = 5A | 27 | 40 | m | |
| Drain-source on-state resistance | RDS(on) | 2) VGS = 2.5V, ID = 4A | 33 | 52 | m | |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | 3) VDS = 10V, VGS = 6V, ID = 5A | 9.5 | nC | ||
| Gate-source charge | Qgs | 3) | 1.5 | |||
| Gate-drain charge | Qg d | 3) | 3 | |||
| Gate resistance | Rg | VDS = 0V, VGS = 0V, f = 1MHz | 3.6 | |||
| Input capacitance | Ciss | 3) VDS = 15V, VGS = 0V, f = 1MHz | 820 | 1050 | pF | |
| Output capacitance | Coss | 3) | 99 | |||
| Reverse transfer capacitance | Crss | 3) | 77 | |||
| Switching Parameters | ||||||
| Turn-on delay time | td(on) | 3) VGS = 10V, RGEN = 3, VDS = 15V, RL = 2.7 | 3.3 | 5 | ns | |
| Turn-off delay time | td(off) | 3) | 4.8 | 7 | ||
| Rise time | tr | 3) | 26 | 40 | ||
| Fall time | tf | 3) | 4 | 6 | ||
| Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | 2) IS = 1A, VGS = 0V | 1 | V | ||
| Continuous drain-source diode forward current | IS | 5.8 | A | |||
| Pulsed drain-source diode forward current | ISM | 1) | 30 | A | ||
Notes:
1) Repetitive rating: Pulse width limited by maximum junction temperature.
2) Pulse test: Pulse width 300s, duty cycle 2%.
3) Guaranteed by design, not subject to production.
2411121102_JSCJ-AD-CJ3400_C2975622.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
