N Channel Enhancement Mode MOSFET JSMSEMI AO3400 Designed for Low Voltage and High Current Switching
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
40mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF@15V
Pd - Power Dissipation:
350mW
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description
Product Overview
The JSMICRO Semiconductor AO3400 is an N-Channel Enhancement mode Field Effect Transistor designed for general switching and low-voltage power supply circuits. It offers strong current capability and low on-resistance, making it suitable for various applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AO3400
- Package Type: SOT-23
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions |
| Absolute Maximum Ratings (Ta=25) | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | 5.8 | A | |
| Power Dissipation | PD | 0.35 | W | |
| Junction to Ambient Thermal Resistance | RJA | 350 | /mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55150 | ||
| Electrical Characteristics (Ta=25) | ||||
| Source-Drain Breakdown Voltage | VBR(DSS) | 30 | V | VGS=0V,ID=250A |
| Gate Threshold Voltage | VGS(th) | 0.7 - 1.4 | V | ID=250A, VGS=VDS |
| Gate Leakage Current | IGSS | 100 | nA | VGS=12V,VDS=0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VGS=0V, VDS=24V |
| Drain-Source On-Resistance | RDS(ON) | 35 | m | VGS=10V,ID=5.8A |
| 40 | m | VGS=4.5V,ID=5A | ||
| 52 | m | VGS=2.5V,ID=4A | ||
| Forward Transconductance | gfs | 8 | S | VDS=5V,ID=5A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 1050 | pF | VDS=15V,VGS=0V,f=1MHz |
| Output Capacitance | Coss | 99 | pF | VDS=15V,VGS=0V,f=1MHz |
| Reverse Transfer Capacitance | Crss | 77 | pF | VDS=15V,VGS=0V,f=1MHz |
| Gate Resistance | Rg | 3.6 | VDS=0V,VGS=0V,f=1MHz | |
| Switching Characteristics | ||||
| Turn-on Delay Time | td(on) | 5 | ns | VDS=15V,VGS=10V, RGEN=3,RL=2.7 |
| Rise Time | tr | 7 | ns | VDS=15V,VGS=10V, RGEN=3,RL=2.7 |
| Turn-off Delay Time | td(off) | 40 | ns | VDS=15V,VGS=10V, RGEN=3,RL=2.7 |
| Fall Time | tf | 6 | ns | VDS=15V,VGS=10V, RGEN=3,RL=2.7 |
| Drain-Source Body Diode Characteristics | ||||
| Diode Forward Voltage | VSD | 1 | V | IS=1A,VGS=0V |
2401051657_JSMSEMI-AO3400_C5296723.pdf
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