Power MOSFET JSCJ CJAB25N04S N Channel with trench technology delivering low RDS ON and stable operation
Key Attributes
Model Number:
CJAB25N04S
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-40℃~+150℃
RDS(on):
9.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
58pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.2nF@25V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
CJAB25N04S
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB25N04S is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capability, a high-density cell design for ultra-low RDS(ON), and good stability with high EAS. This lead-free product is suitable for a wide range of applications including SMPS, general purpose applications, hard switched and high frequency circuits, uninterruptible power supply, and power management.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB25N04S
- Material: Plastic-Encapsulate MOSFET
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =10A | 7.5 | 9.4 | m | |
| VGS =4.5V, ID =10A | 10.5 | 15 | m | |||
| Forward transconductance | gFS | VDS =10V, ID =2A | 15 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 1200 | pF | ||
| Output capacitance | Coss | 124 | pF | |||
| Reverse transfer capacitance | Crss | 58 | pF | |||
| Total gate charge | Qg | VDS=20V, VGS=10V, ID=10A | 20.3 | nC | ||
| Gate-source charge | Qgs | 3.2 | nC | |||
| Gate-drain charge | Qgd | 5.0 | nC | |||
| Turn-on delay time | td(on) | VDS=15V,ID=10A, VGS=10V,RG=3 | 12.7 | ns | ||
| Turn-on rise time | tr | 2.7 | ns | |||
| Turn-off delay time | td(off) | 57 | ns | |||
| Turn-off fall time | tf | 4.8 | ns | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 25 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A |
2410121917_JSCJ-CJAB25N04S_C504067.pdf
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