220AB Package P Channel MOSFET JSMSEMI IRF9Z34NPBF JSM Halogen Free Suitable for Battery Protection
Key Attributes
Model Number:
IRF9Z34NPBF-JSM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
1.65nF@25V
Gate Charge(Qg):
3.8nC@4.5V
Mfr. Part #:
IRF9Z34NPBF-JSM
Package:
TO-220AB
Product Description
Product Overview
P-CHANNEL MOSFET in a TO-220AB Plastic Package. Features high current capability and is a halogen-free product. Suitable for AC-in load switch and battery protection (charge/discharge) applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: IRF9Z34NPBF
- Package: TO-220AB
- Material: P-Channel MOSFET
- Certifications: HF Product (Halogen-Free)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Drain Current (Tc=25) | ID(Tc=25) | -20 | A | |||
| Drain Current - Pulsed | IDM | -80 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Avalanche Current | IAS | 13.8 | A | |||
| Avalanche energy (L=0.5mH) | EAS | 65 | mJ | |||
| Power Dissipation (Tc=25) | PD(Tc=25) | 20 | W | |||
| Power Dissipation (Tc=100) | PD(Tc=100) | 10 | W | |||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | |||
| Maximum Junction-to-Ambient (t 10s) | RJA | 30 | /W | |||
| Maximum Junction-to-Ambient (Steady-State) | 60 | /W | ||||
| Maximum Junction-to-Case (Steady-State) | RJC | 7.5 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | -70 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1.0 | A | ||
| Zero Gate Voltage Drain Current (TJ=55C) | IDSS | VDS=-60V, VGS=0V | -5.0 | A | ||
| Gate-Body Leakage Current (Forward) | IGSS | VGS=20V, VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | -1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(on)1 | VGS=-10V, ID=-20A | 87 | 92 | m | |
| Static Drain-Source On-Resistance | RDS(on)2 | VGS=-4.5V, ID=-10A | 98 | 102 | m | |
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -0.7 | -1.2 | V | |
| Capacitance and Gate Charge | ||||||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHz | 1650 | pF | ||
| Output Capacitance | Coss | 330 | pF | |||
| Reverse Transfer Capacitance | Crss | 205 | pF | |||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6.4 | |||
| Total Gate Charge (10V) | Qg(10V) | VGS=-10V, VDS=-30V, ID=-12A | 7.5 | nC | ||
| Total Gate Charge (4.5V) | Qg(4.5V) | 3.8 | nC | |||
| Gate Source Charge | Qgs | 1.2 | nC | |||
| Gate Drain Charge | Qg | 1.9 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V, VDS=-30V, RL=2.5, RGEN=3 | 4.2 | ns | ||
| Turn-On Rise Time | tr | 3.4 | ns | |||
| Turn-Off Delay Time | td(off) | 16 | ns | |||
| Turn-Off Fall Time | tf | ns | ||||
| Body Diode Reverse Recovery Time | trr | IF=-12A, dI/dt=500A/ms | 27 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-12A, dI/dt=500A/ms | 30 | nC | ||
2401051654_JSMSEMI-IRF9Z34NPBF-JSM_C2886330.pdf
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