load switch MOSFET JSCJ CJU12P06 P Channel with ultra low gate charge and excellent heat dissipation
Key Attributes
Model Number:
CJU12P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
96mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 P-Channel
Output Capacitance(Coss):
200pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.6nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
CJU12P06
Package:
TO-252-2L
Product Description
Product Overview
The CJU12P06 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed for excellent RDS(ON), low gate charge, and operation with low gate voltages. Its features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability. This device is suitable for use as a load switch or in PWM applications, and is ideal for power switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Color: Normal device (Solid dot = Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off characteristics | Drain-source breakdown voltage | VGS = 0V, ID =-250A | -60 | V | ||
| Zero gate voltage drain current | VDS =-48V, VGS =0V | -1 | -1 | A | ||
| Gate-body leakage current | VDS =0V, VGS =20V | 100 | nA | |||
| Gate-threshold voltage | VDS =VGS, ID =-250A | -1.0 | -1.8 | -3.0 | V | |
| On characteristics | Static drain-source on-sate resistance | VGS =-10V, ID =-8A | 75 | m | ||
| VGS =-4.5V, ID =-8A | 90 | m | ||||
| Dynamic characteristics | Input capacitance | VDS =-25V,VGS =0V, f =1MHz | 1600 | p F | ||
| Output capacitance | ||||||
| Reverse transfer capacitance | 115 | 40 | ||||
| Switching characteristics | Total gate charge | VGS=-10V, VDS=-20V, ID=-4A | 18 | n C | ||
| Gate-source charge | 3.2 | |||||
| Gate-drain charge | 3.8 | |||||
| Turn-on delay time | VDD=-30V,ID=-1A, VGS=-10V,RG=2.5, RL=15 | 8 | ns | |||
| Turn-on rise time | 6 | |||||
| Turn-off delay time | 30 | |||||
| Turn-off fall time | 7 | |||||
| Drain-Source Diode Characteristics | Drain-source diode forward voltage | VGS =0V, IS=-12A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -12 | A | |||
| Pulsed drain-source diode forward current | ISM | -30 | A | |||
| Maximum Ratings | Drain-Source Voltage | VDS | -60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -12 | A | |||
| Pulsed Drain Current | IDM | -30 | A | |||
| Single Pulsed Avalanche Energy | EAS | 100 | mJ | |||
| Power Dissipation | PD | 50 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 100 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2410121914_JSCJ-CJU12P06_C3031880.pdf
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