Low Gate Voltage P Channel MOSFET JSMSEMI JSM4407 with Lead Free Package and High Current Capability
Key Attributes
Model Number:
JSM4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.75nF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
24nC@15V
Mfr. Part #:
JSM4407
Package:
SOP-8
Product Description
Product Overview
The 4407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This high-performance MOSFET is designed for applications requiring robust power and current handling capabilities, such as battery switches, load switches, and power management solutions. It is a lead-free product available in a surface mount package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA =25 | -30 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | -60 | A | ||
| Maximum Power Dissipation | PD | 2.1 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TST | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Ambient | RJA | Note 2 | 50 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-10.0A | 9 | 14 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-6.0A | 14 | 20 | m | |
| Forward Transconductance | gFS | VDS=-15V,ID=-5.0A | 20 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 1750 | PF | |||
| Output Capacitance | Coss | 215 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 180 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1 | 9 | nS | ||
| Turn-on Rise Time | tr | 8 | nS | |||
| Turn-Off Delay Time | td(off) | 28 | nS | |||
| Turn-Off Fall Time | tf | 10 | nS | |||
| Total Gate Charge | Qg | 24 | nC | |||
| Gate-Source Charge | Qgs | 3.5 | nC | |||
| Gate-Drain Charge | Qgd | 6 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-10A (Note 3) | -1.2 | V | ||
2401051645_JSMSEMI-JSM4407_C917090.pdf
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