N Channel Power MOSFET JSCJ CJAB35N03 with Excellent Heat Dissipation and Low Gate Threshold Voltage
Key Attributes
Model Number:
CJAB35N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
228pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.013nF@15V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
CJAB35N03
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB35N03 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for high-side switching in POL DC/DC converters and secondary-side synchronous rectification. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability, excellent heat dissipation, and high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB35N03
- Package Type: PDFNWB3.33.3-8L
- Material: Plastic-Encapsulated
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 3.0 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =12A | 7 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 12 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2013 | pF | ||
| Output capacitance | Coss | 257 | ||||
| Reverse transfer capacitance | Crss | 228 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=12A | 40 | nC | ||
| Gate-source charge | Qgs | 5.1 | ||||
| Gate-drain charge | Qgd | 9.1 | ||||
| Turn-on delay time | td(on) | VDS=15V,ID=12A , VGS=10V,RG=6 | ns | |||
| Turn-on rise time | tr | |||||
| Turn-off delay time | td(off) | |||||
| Turn-off fall time | tf | |||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=12A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 35 | A | |||
| Pulsed drain-source diode forward current | ISM | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 35 | A | |||
| Pulsed Drain Current | IDM | 120 | ||||
| Maximum Power Dissipation | PD | TC=25 | 45 | W | ||
| Single Pulsed Avalanche Energy | EAS | 35 | mJ | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 2.7 | /W | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10s) | TL | 260 | ||||
2410121917_JSCJ-CJAB35N03_C504070.pdf
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